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Generated by kicad-footprint-generator · KiCad file format 20260206

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hyg025n06ls1d-etched.glb	Publish 0.1.0 · Ray	23d ago
hyg025n06ls1d-etched.step	hyg025n06ls1d: factory component page (tier=lcsc) · Ray	23d ago
hyg025n06ls1d-hero.glb	hyg025n06ls1d: hero GLB from the etched model (keeps the MPN mark) · Ray	23d ago
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HYG025N06LS1D

HUAYI · MOSFETs · TO-252-2L

HYG025N06LS1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; the gate-source voltage is rated at ±20 V (VGSS) with a threshold of 1.0 to 3.0 V at 250 µA.
2	D	passive	Drain, the middle stub lead and the exposed mounting tab; rated at 60 V drain-source (VDSS) and 160 A continuous at Tc=25°C.
3	S	passive	Source; body-diode source current is rated at 160 A continuous at Tc=25°C.

Key specifications

Parameter	Value
Manufacturer	HUAYI
Package	TO-252-2L
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			60	V	Tc=25°C unless otherwise noted	2
Gate-Source Voltage	VGSS	-20		20	V		2
Maximum Junction Temperature	TJ			175	°C		2
Storage Temperature Range	TSTG	-55		175	°C		2
Source Current-Continuous (Body Diode)	IS			160	A	Tc=25°C; mounted on large heat sink	2
Pulsed Drain Current	IDM			620	A	Tc=25°C	2
Continuous Drain Current	ID			160	A	Tc=25°C	2
Continuous Drain Current	ID			113	A	Tc=100°C	2
Maximum Power Dissipation	PD			125	W	Tc=25°C	2
Maximum Power Dissipation	PD			62.5	W	Tc=100°C	2
Single Pulsed-Avalanche Energy	EAS			301.8	mJ	L=0.3mH	2
Thermal Resistance, Junction-to-Case	RJC			1.2	°C/W		2
Thermal Resistance, Junction-to-Ambient	RJA			110	°C/W	Surface mounted on FR-4 board	2
Drain-Source Breakdown Voltage	BVDSS	60			V	VGS=0V,IDS=250μA	2
Drain-to-Source Leakage Current	IDSS			1	μA	VDS=60V,VGS=0V	2
Drain-to-Source Leakage Current	IDSS			50	μA	TJ=100°C	2
Gate Threshold Voltage	VGS(th)	1	2.1	3	V	VDS=VGS, IDS=250μA	2
Gate-Source Leakage Current	IGSS			100	nA	VGS=±20V,VDS=0V	2
Drain-Source On-State Resistance	RDS(ON)		2.6	3.3	mΩ	VGS=10V,IDS=40A	2
Drain-Source On-State Resistance	RDS(ON)		3.8	4.7	mΩ	VGS=4.5V,IDS=40A	2
Diode Forward Voltage	VSD		0.85	1.3	V	ISD=40A,VGS=0V	2

CAD (KiCad official)

Symbol: HYG025N06LS1D
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2L (KiCad packages3D, STEP)
3D model files: hyg025n06ls1d-etched.step / hyg025n06ls1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg025n06ls1d.step / hyg025n06ls1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUAYI datasheet (9 pp, sha256 608b55d605783a18, retrieved 2026-10-19, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF