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HY1908D
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HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HY1908D
HUAYI · MOSFETs · TO-252-2L
HY1908D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, left lead in the TO-252-2L pin drawing, with VGSS rated ±25V and threshold 2V min to 4V max at IDS=250μA. |
| 2 | D | passive | Drain of the N-channel MOSFET, the center position in the pin drawing (short center stub and the exposed tab), with VDSS rated 80V and continuous ID of 90A at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, right lead in the TO-252-2L pin drawing, with diode continuous forward current IS of 90A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -25 | 25 | V | 2 | ||
| Maximum Junction Temperature | TJ | 175 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 2 | ||
| Diode Continuous Forward Current | IS | 90 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 90 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 59 | A | TC=100°C | 2 | ||
| Maximum Power Dissipation | PD | 64 | W | TC=25°C | 2 | ||
| Maximum Power Dissipation | PD | 32 | W | TC=100°C | 2 | ||
| Thermal Resistance-Junction to Case | RθJC | 2.35 | °C/W | 2 | |||
| Thermal Resistance-Junction to Ambient | RθJA | 110 | °C/W | 2 | |||
| Drain-Source Voltage | VDSS | 80 | V | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=80V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, IDS=250μA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 7.8 | 9 | mΩ | VGS=10V, IDS=45A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | ISD=45 GS=0V (as printed) | 2 | |
| Reverse Recovery Time | trr | 30 | ns | ISD=45A, dlSD/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 25 | nC | ISD=45A, dlSD/dt=100A/μs | 2 | ||
| Gate Resistance | RG | 1.2 | Ω | VGS=0V,VDS=0V,F=1MHz | 3 | ||
| Output Capacitance | Coss | 365 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 | ||
| Turn-on Delay Time | td(ON) | 26 | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 | ||
| Turn-off Delay Time | td(OFF) | 64 | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 | ||
| Turn-off Fall Time | Tf | 20 | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 | ||
| Total Gate Charge | Qg | 84 | nC | VDS=64V, VGS=10V, IDS=45A | 3 | ||
| Gate-Source Charge | Qgs | 16 | nC | VDS=64V, VGS=10V, IDS=45A | 3 | ||
| Gate-Drain Charge | Qgd | 26 | nC | VDS=64V, VGS=10V, IDS=45A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-fre | 1 |
CAD (KiCad official)
- Symbol:
HY1908D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hy1908d-etched.step/hy1908d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hy1908d.step/hy1908d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (12 pp, sha256
1a2b28bc0f1bc4d8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HY1908D
**HUAYI** · MOSFETs · TO-252-2L
HY1908D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, left lead in the TO-252-2L pin drawing, with VGSS rated ±25V and threshold 2V min to 4V max at IDS=250μA. |
| 2 | D | passive | Drain of the N-channel MOSFET, the center position in the pin drawing (short center stub and the exposed tab), with VDSS rated 80V and continuous ID of 90A at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, right lead in the TO-252-2L pin drawing, with diode continuous forward current IS of 90A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 2 |
| Maximum Junction Temperature | TJ | | | 175 | °C | | 2 |
| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 2 |
| Diode Continuous Forward Current | IS | | | 90 | A | TC=25°C | 2 |
| Continuous Drain Current | ID | | | 90 | A | TC=25°C | 2 |
| Continuous Drain Current | ID | | | 59 | A | TC=100°C | 2 |
| Maximum Power Dissipation | PD | | | 64 | W | TC=25°C | 2 |
| Maximum Power Dissipation | PD | | | 32 | W | TC=100°C | 2 |
| Thermal Resistance-Junction to Case | RθJC | | | 2.35 | °C/W | | 2 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 110 | °C/W | | 2 |
| Drain-Source Voltage | VDSS | | | 80 | V | | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=80V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, IDS=250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 7.8 | 9 | mΩ | VGS=10V, IDS=45A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | ISD=45 GS=0V (as printed) | 2 |
| Reverse Recovery Time | trr | | 30 | | ns | ISD=45A, dlSD/dt=100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 25 | | nC | ISD=45A, dlSD/dt=100A/μs | 2 |
| Gate Resistance | RG | | 1.2 | | Ω | VGS=0V,VDS=0V,F=1MHz | 3 |
| Output Capacitance | Coss | | 365 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |
| Turn-on Delay Time | td(ON) | | 26 | | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 |
| Turn-off Delay Time | td(OFF) | | 64 | | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 |
| Turn-off Fall Time | Tf | | 20 | | ns | VDD=40V, RG=6 Ω, IDS=45A, VGS=10V | 3 |
| Total Gate Charge | Qg | | 84 | | nC | VDS=64V, VGS=10V, IDS=45A | 3 |
| Gate-Source Charge | Qgs | | 16 | | nC | VDS=64V, VGS=10V, IDS=45A | 3 |
| Gate-Drain Charge | Qgd | | 26 | | nC | VDS=64V, VGS=10V, IDS=45A | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-fre | 1 |
## CAD (KiCad official)
- Symbol: `HY1908D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hy1908d-etched.step` / `hy1908d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hy1908d.step` / `hy1908d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUAYI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202555549929472) (12 pp, sha256 `1a2b28bc0f1bc4d8`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hy1908d-datasheet.pdf)