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HY1908D

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HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HY1908D

HUAYI · MOSFETs · TO-252-2L

HY1908D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, left lead in the TO-252-2L pin drawing, with VGSS rated ±25V and threshold 2V min to 4V max at IDS=250μA.
2 D passive Drain of the N-channel MOSFET, the center position in the pin drawing (short center stub and the exposed tab), with VDSS rated 80V and continuous ID of 90A at TC=25°C.
3 S passive Source of the N-channel MOSFET, right lead in the TO-252-2L pin drawing, with diode continuous forward current IS of 90A at TC=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -25 25 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Diode Continuous Forward Current IS 90 A TC=25°C 2
Continuous Drain Current ID 90 A TC=25°C 2
Continuous Drain Current ID 59 A TC=100°C 2
Maximum Power Dissipation PD 64 W TC=25°C 2
Maximum Power Dissipation PD 32 W TC=100°C 2
Thermal Resistance-Junction to Case RθJC 2.35 °C/W 2
Thermal Resistance-Junction to Ambient RθJA 110 °C/W 2
Drain-Source Voltage VDSS 80 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=80V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA TJ=85°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 7.8 9 mΩ VGS=10V, IDS=45A 2
Diode Forward Voltage VSD 0.8 1.2 V ISD=45 GS=0V (as printed) 2
Reverse Recovery Time trr 30 ns ISD=45A, dlSD/dt=100A/μs 2
Reverse Recovery Charge Qrr 25 nC ISD=45A, dlSD/dt=100A/μs 2
Gate Resistance RG 1.2 Ω VGS=0V,VDS=0V,F=1MHz 3
Output Capacitance Coss 365 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 26 ns VDD=40V, RG=6 Ω, IDS=45A, VGS=10V 3
Turn-off Delay Time td(OFF) 64 ns VDD=40V, RG=6 Ω, IDS=45A, VGS=10V 3
Turn-off Fall Time Tf 20 ns VDD=40V, RG=6 Ω, IDS=45A, VGS=10V 3
Total Gate Charge Qg 84 nC VDS=64V, VGS=10V, IDS=45A 3
Gate-Source Charge Qgs 16 nC VDS=64V, VGS=10V, IDS=45A 3
Gate-Drain Charge Qgd 26 nC VDS=64V, VGS=10V, IDS=45A 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-fre 1

CAD (KiCad official)

  • Symbol: HY1908D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hy1908d-etched.step / hy1908d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy1908d.step / hy1908d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (12 pp, sha256 1a2b28bc0f1bc4d8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF