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HXY8205ES

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY8205ES

HXY MOSFET · MOSFETs · TSSOP-8

HXY8205ES from HXY MOSFET, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain of N-channel MOSFET 1 (VDS max 20V, continuous ID 6A per device rating).
2 S1 passive Source of N-channel MOSFET 1, tied to the load/ground side of channel 1.
3 S1 passive Source of N-channel MOSFET 1, second source pin in parallel with pin 2.
4 G1 input Gate of N-channel MOSFET 1 (VGS max ±12V, VGS(th) 0.5V to 1.2V).
5 G2 input Gate of N-channel MOSFET 2 (VGS max ±12V, VGS(th) 0.5V to 1.2V).
6 S2 passive Source of N-channel MOSFET 2, second source pin in parallel with pin 7.
7 S2 passive Source of N-channel MOSFET 2, tied to the load/ground side of channel 2.
8 D2 passive Drain of N-channel MOSFET 2 (VDS max 20V, continuous ID 6A per device rating).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 21 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=19.5V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±10V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 21 27 mΩ VGS=4.5V, ID=4.5A 2
Drain-Source On-State Resistance RDS(ON) 27 37 mΩ VGS=2.5V, ID=3.5A 2
Turn-on Delay Time td(on) 10 20 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-on Rise Time tr 11 25 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 35 70 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Fall Time tf 30 60 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Total Gate Charge Qg 10 15 nC VDS=10V,ID=6A, VGS=4.5V 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=1.7A 2
Diode Forward Current IS 1.7 A 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 6 A TA=25℃ 1
Drain Current-Pulsed IDM 25 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 1.5 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1
Forward Transconductance gFS 10 S VDS=5V,ID=4.5A 2
Input Capacitance Clss 600 PF VDS=8V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 330 PF VDS=8V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 140 PF VDS=8V,VGS=0V, F=1.0MHz 2
Gate-Source Charge Qgs 2.3 nC VDS=10V,ID=6A, VGS=4.5V 2
Gate-Drain Charge Qgd 1.5 nC VDS=10V,ID=6A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: HXY8205ES
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy8205es-etched.step / hxy8205es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy8205es.step / hxy8205es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 923b288b540edebe, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF