component
HXY8205ES
Public Made by Adomby adom
HXY MOSFET MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHXY8205ES
HXY MOSFET · MOSFETs · TSSOP-8
HXY8205ES from HXY MOSFET, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of N-channel MOSFET 1 (VDS max 20V, continuous ID 6A per device rating). |
| 2 | S1 | passive | Source of N-channel MOSFET 1, tied to the load/ground side of channel 1. |
| 3 | S1 | passive | Source of N-channel MOSFET 1, second source pin in parallel with pin 2. |
| 4 | G1 | input | Gate of N-channel MOSFET 1 (VGS max ±12V, VGS(th) 0.5V to 1.2V). |
| 5 | G2 | input | Gate of N-channel MOSFET 2 (VGS max ±12V, VGS(th) 0.5V to 1.2V). |
| 6 | S2 | passive | Source of N-channel MOSFET 2, second source pin in parallel with pin 7. |
| 7 | S2 | passive | Source of N-channel MOSFET 2, tied to the load/ground side of channel 2. |
| 8 | D2 | passive | Drain of N-channel MOSFET 2 (VDS max 20V, continuous ID 6A per device rating). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TSSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 21 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=19.5V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 21 | 27 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 27 | 37 | mΩ | VGS=2.5V, ID=3.5A | 2 | |
| Turn-on Delay Time | td(on) | 10 | 20 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-on Rise Time | tr | 11 | 25 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 70 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-Off Fall Time | tf | 30 | 60 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Total Gate Charge | Qg | 10 | 15 | nC | VDS=10V,ID=6A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=1.7A | 2 | |
| Diode Forward Current | IS | 1.7 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 6 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 25 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 83 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=4.5A | 2 | ||
| Input Capacitance | Clss | 600 | PF | VDS=8V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 330 | PF | VDS=8V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 140 | PF | VDS=8V,VGS=0V, F=1.0MHz | 2 | ||
| Gate-Source Charge | Qgs | 2.3 | nC | VDS=10V,ID=6A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 1.5 | nC | VDS=10V,ID=6A, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
HXY8205ES - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
hxy8205es-etched.step/hxy8205es-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy8205es.step/hxy8205es.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
923b288b540edebe, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).