# HXY4832S

**HXY MOSFET** · MOSFETs · SOP-8

HXY4832S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first N-channel MOSFET in this dual device, rated with the device's 30 V drain-source maximum. |
| 2 | G1 | input | Gate of the first N-channel MOSFET, with gate-source voltage rated at ±20 V maximum and gate threshold of 1.5 V to 2.5 V. |
| 3 | S2 | passive | Source terminal of the second N-channel MOSFET in this dual device, rated with the device's 30 V drain-source maximum. |
| 4 | G2 | input | Gate of the second N-channel MOSFET, with gate-source voltage rated at ±20 V maximum and gate threshold of 1.5 V to 2.5 V. |
| 5 | D2 | passive | Drain of the second N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C. |
| 6 | D2 | passive | Drain of the second N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C. |
| 7 | D1 | passive | Drain of the first N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C. |
| 8 | D1 | passive | Drain of the first N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 30 |  |  | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 |  | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 12 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 18 | mΩ | VGS=10V, ID=10A, TJ=125℃ | 2 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 16.5 | mΩ | VGS=4.5 V, ID=8A | 2 |
| On State Drain Current | ID(ON) | 55 |  |  | A | VGS=10V, VDS=5V | 2 |
| Forward Transconductance | gFS | 43 |  |  | S | VDS=5V, ID=10A | 2 |
| Input Capacitance | Ciss |  | 610 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 88 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 40 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Resistance | Rg |  | 0.8 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 11 | 17 | nC | VGS=10V, VDS=15V, ID=10A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 5 | 8 | nC |  | 2 |
| Gate Source Charge | Qgs |  | 2.4 |  | nC | VGS=10V, VDS=15V, ID=10A | 2 |
| Gate Drain Charge | Qgd |  | 3 |  | nC | VGS=10V, VDS=15V, ID=10A | 2 |
| Turn-On Delay Time | td(on) |  | 4.4 |  | ns | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 9 |  | ns | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 17 |  | ns | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 6 |  | ns | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 5.6 | 8 | ns | IF=10A, dI/dt=500A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 6.4 | 9.6 | nC | IF=10A, dI/dt=500A/us | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2.5 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | IS=1A, VGS=0V | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V |  | 1 |
| Drain Current | ID@TA=25℃ |  |  | 10 | A | VGS @ 4.5V, TA=25℃ | 1 |
| Drain Current | ID@TA=70℃ |  |  | 8 | A | VGS @ 4.5V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 55 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 62.5 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `HXY4832S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hxy4832s-etched.step` / `hxy4832s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy4832s.step` / `hxy4832s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974574426402816) (7 pp, sha256 `2596e416064fae80`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy4832s-datasheet.pdf)