component

HXY4832S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshxy4832sfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers hxy4832s: viewers · Ray 17d ago
hxy4832s-etched.glb Publish 0.1.0 · Ray 17d ago
hxy4832s-etched.step hxy4832s: factory component page (tier=lcsc) · Ray 17d ago
hxy4832s-hero.glb hxy4832s: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
hxy4832s-hero.overlay.json Publish 0.1.0 · Ray 17d ago
hxy4832s.glb Publish 0.1.0 · Ray 17d ago
hxy4832s.kicad_mod Publish 0.1.0 · Ray 17d ago
hxy4832s.kicad_sym Publish 0.1.0 · Ray 17d ago
hxy4832s.lbr Publish 0.1.0 · Ray 17d ago
hxy4832s.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

HXY4832S

HXY MOSFET · MOSFETs · SOP-8

HXY4832S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first N-channel MOSFET in this dual device, rated with the device's 30 V drain-source maximum.
2 G1 input Gate of the first N-channel MOSFET, with gate-source voltage rated at ±20 V maximum and gate threshold of 1.5 V to 2.5 V.
3 S2 passive Source terminal of the second N-channel MOSFET in this dual device, rated with the device's 30 V drain-source maximum.
4 G2 input Gate of the second N-channel MOSFET, with gate-source voltage rated at ±20 V maximum and gate threshold of 1.5 V to 2.5 V.
5 D2 passive Drain of the second N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C.
6 D2 passive Drain of the second N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C.
7 D1 passive Drain of the first N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C.
8 D1 passive Drain of the first N-channel MOSFET, rated for 30 V VDS and 10 A drain current at TA=25°C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDSS 30 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 uA VDS=30V, VGS=0V, TJ=55℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.5 2.5 V VDS=VGS, ID=250uA 2
Static Drain-Source On-Resistance RDS(On) 12 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(On) 18 mΩ VGS=10V, ID=10A, TJ=125℃ 2
Static Drain-Source On-Resistance RDS(On) 16.5 mΩ VGS=4.5 V, ID=8A 2
On State Drain Current ID(ON) 55 A VGS=10V, VDS=5V 2
Forward Transconductance gFS 43 S VDS=5V, ID=10A 2
Input Capacitance Ciss 610 910 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 88 160 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 40 100 pF VGS=0V, VDS=15V, f=1MHz 2
Gate Resistance Rg 0.8 2.4 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 11 17 nC VGS=10V, VDS=15V, ID=10A 2
Total Gate Charge (4.5V) Qg 5 8 nC 2
Gate Source Charge Qgs 2.4 nC VGS=10V, VDS=15V, ID=10A 2
Gate Drain Charge Qgd 3 nC VGS=10V, VDS=15V, ID=10A 2
Turn-On Delay Time td(on) 4.4 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2
Turn-On Rise Time tr 9 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2
Turn-Off Delay Time td(off) 17 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 6 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 5.6 8 ns IF=10A, dI/dt=500A/us 2
Body Diode Reverse Recovery Charge Qrr 6.4 9.6 nC IF=10A, dI/dt=500A/us 2
Maximum Body-Diode Continuous Current IS 2.5 A 2
Diode Forward Voltage VSD 1 V IS=1A, VGS=0V 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 10 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=70℃ 8 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 55 A 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: HXY4832S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy4832s-etched.step / hxy4832s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy4832s.step / hxy4832s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 2596e416064fae80, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF