# HXY4612S

**HXY MOSFET** · MOSFETs · SOP-8

HXY4612S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS = 60V, ID = 5A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20V maximum. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS = -60V, ID = -4A. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20V maximum. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 6, with pulsed drain current up to -13A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 5, with pulsed drain current up to -13A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 8, with pulsed drain current up to 15A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 7, with pulsed drain current up to 15A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 60 | 65 |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 60 | 70 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 78 | 90 | mΩ | VGS=4.5V, ID=4A | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 1.75 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current (N-Channel) | IS |  |  | 2.5 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage (N-Channel) | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -60 | -65 |  | V | VGS=0V, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 120 | 140 | mΩ | VGS=-10V, ID=-3A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 190 | 210 | mΩ | VGS=-4.5V, ID=-2A | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.2 | 1.75 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current (P-Channel) | IS | -2.5 |  |  | A | VG=VD=0V, Force Current | 3 |
| Diode Forward Voltage (P-Channel) | VSD | -1.2 |  |  | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
| Drain-Source Voltage (N-Channel) | VDS |  |  | 60 | V |  | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Channel) | ID@TA=25℃ |  |  | 5 | A | VGS @ 10V | 1 |
| Continuous Drain Current (P-Channel) | ID@TA=25℃ | -4 |  |  | A | VGS @ 10V | 1 |
| Continuous Drain Current (N-Channel) | ID@TA=70℃ |  |  | 3.2 | A | VGS @ 10V | 1 |
| Continuous Drain Current (P-Channel) | ID@TA=70℃ | -2.6 |  |  | A | VGS @ 10V | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 15 | A |  | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -13 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy (N-Channel) | EAS |  |  | 22 | mJ |  | 1 |
| Single Pulse Avalanche Energy (P-Channel) | EAS |  |  | 28.8 | mJ |  | 1 |
| Avalanche Current (N-Channel) | IAS |  |  | 21 | A |  | 1 |
| Avalanche Current (P-Channel) | IAS | -24 |  |  | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  | 85 |  | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  | 62.5 |  | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) | 1 |

## CAD (KiCad official)

- Symbol: `HXY4612S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hxy4612s-etched.step` / `hxy4612s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy4612s.step` / `hxy4612s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974504905814016) (9 pp, sha256 `7565918a247d0056`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy4612s-datasheet.pdf)