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HXY4612S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 23d ago
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hxy4612s-etched.glb hxy4612s: factory component page (tier=lcsc) · Ray 23d ago
hxy4612s-etched.step hxy4612s: factory component page (tier=lcsc) · Ray 23d ago
hxy4612s-hero.glb hxy4612s: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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hxy4612s.glb Publish 0.1.0 · Ray 23d ago
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hxy4612s.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json hxy4612s: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 17d ago
README.md hxy4612s: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 17d ago

HXY4612S

HXY MOSFET · MOSFETs · SOP-8

HXY4612S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated VDS = 60V, ID = 5A.
2 G1 input Gate of the N-channel MOSFET (Q1), with VGS rated ±20V maximum.
3 S2 passive Source of the P-channel MOSFET (Q2), rated VDS = -60V, ID = -4A.
4 G2 input Gate of the P-channel MOSFET (Q2), with VGS rated ±20V maximum.
5 D2 passive Drain of the P-channel MOSFET (Q2), tied internally to pin 6, with pulsed drain current up to -13A.
6 D2 passive Drain of the P-channel MOSFET (Q2), tied internally to pin 5, with pulsed drain current up to -13A.
7 D1 passive Drain of the N-channel MOSFET (Q1), tied internally to pin 8, with pulsed drain current up to 15A.
8 D1 passive Drain of the N-channel MOSFET (Q1), tied internally to pin 7, with pulsed drain current up to 15A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (N-Channel) BVDSS 60 65 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 60 70 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 78 90 mΩ VGS=4.5V, ID=4A 2
Gate Threshold Voltage (N-Channel) VGS(th) 1.2 1.75 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (N-Channel) IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Channel) IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current (N-Channel) IS 2.5 A VG=VD=0V, Force Current 2
Diode Forward Voltage (N-Channel) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Channel) BVDSS -60 -65 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 120 140 mΩ VGS=-10V, ID=-3A 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 190 210 mΩ VGS=-4.5V, ID=-2A 3
Gate Threshold Voltage (P-Channel) VGS(th) -1.2 1.75 -2.5 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current (P-Channel) IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Channel) IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current (P-Channel) IS -2.5 A VG=VD=0V, Force Current 3
Diode Forward Voltage (P-Channel) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3
Drain-Source Voltage (N-Channel) VDS 60 V 1
Drain-Source Voltage (P-Channel) VDS -60 V 1
Gate-Source Voltage (N-Channel) VGS -20 20 V 1
Gate-Source Voltage (P-Channel) VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID@TA=25℃ 5 A VGS @ 10V 1
Continuous Drain Current (P-Channel) ID@TA=25℃ -4 A VGS @ 10V 1
Continuous Drain Current (N-Channel) ID@TA=70℃ 3.2 A VGS @ 10V 1
Continuous Drain Current (P-Channel) ID@TA=70℃ -2.6 A VGS @ 10V 1
Pulsed Drain Current (N-Channel) IDM 15 A 1
Pulsed Drain Current (P-Channel) IDM -13 A 1
Single Pulse Avalanche Energy (N-Channel) EAS 22 mJ 1
Single Pulse Avalanche Energy (P-Channel) EAS 28.8 mJ 1
Avalanche Current (N-Channel) IAS 21 A 1
Avalanche Current (P-Channel) IAS -24 A 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 62.5 ℃/W Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) 1

CAD (KiCad official)

  • Symbol: HXY4612S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy4612s-etched.step / hxy4612s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy4612s.step / hxy4612s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 7565918a247d0056, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF