component
HXY4435S
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HXY4435S
HXY MOSFET · MOSFETs · SOP-8
HXY4435S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 13 | 16 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 18 | 27 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -11 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -40 | A | 2 | |||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID@TA=25°C | -11 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | 1 | |||
| Total Power Dissipation | PD@TA=25°C | 3.7 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 33.8 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
HXY4435S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hxy4435s-etched.step/hxy4435s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy4435s.step/hxy4435s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
eb1a72843ac21169, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HXY4435S
**HXY MOSFET** · MOSFETs · SOP-8
HXY4435S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C). |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 13 | 16 | mΩ | VGS=-10V, ID=-10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 18 | 27 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Drain to Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -11 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -40 | A | | 2 |
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current | ID@TA=25°C | | | -11 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | -40 | A | | 1 |
| Total Power Dissipation | PD@TA=25°C | | | 3.7 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 33.8 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `HXY4435S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hxy4435s-etched.step` / `hxy4435s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy4435s.step` / `hxy4435s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974477286322176) (7 pp, sha256 `eb1a72843ac21169`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hxy4435s-datasheet.pdf)