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HXY4435S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY4435S

HXY MOSFET · MOSFETs · SOP-8

HXY4435S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C).
2 S passive Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C).
3 S passive Source terminal of the P-channel MOSFET; the device is rated for VDS = -30 V and continuous ID = -11 A (VGS = -10 V, TA = 25°C).
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V.
6 D passive Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V.
7 D passive Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V.
8 D passive Drain terminal of the P-channel MOSFET; pulsed drain current is rated at -40 A and RDS(on) is below 16 mΩ at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250μA 2
Static Drain-Source on-Resistance RDS(on) 13 16 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source on-Resistance RDS(on) 18 27 mΩ VGS=-4.5V, ID=-5A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS=-15A 2
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID@TA=25°C -11 A VGS @ 10V 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD@TA=25°C 3.7 W 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 33.8 °C/W 1

CAD (KiCad official)

  • Symbol: HXY4435S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy4435s-etched.step / hxy4435s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy4435s.step / hxy4435s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 eb1a72843ac21169, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF