HXY4020NF

{
  "schema_version": 1,
  "type": "component",
  "slug": "hxy4020nf",
  "title": "HXY4020NF",
  "brief": "HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "hxy4020nf",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "HXY4020NF",
    "manufacturer": "HXY MOSFET",
    "package": "DFN5X6-8L",
    "pin_count": 9,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/e2e5b42765698a8d57a95482a531f099.pdf",
    "parts": {
      "symbol": "hxy4020nf.kicad_sym",
      "footprint": "hxy4020nf.kicad_mod",
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      "model_3d_plain": "hxy4020nf-etched.glb",
      "model_3d_step": "hxy4020nf-etched.step",
      "model_3d_step_plain": "hxy4020nf.step",
      "lbr": "hxy4020nf.lbr"
    },
    "distributor_links": {
      "lcsc": "C3033444"
    },
    "distributor_check": {
      "checked_at": "2026-10-22T21:19:08Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (40V, 30A rated)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, VGS limit ±20V."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET (-40V, -20A rated)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, VGS limit ±20V."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, shorted internally to pin 6 (VDS -40V max)."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, shorted internally to pin 5 (VDS -40V max)."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, shorted internally to pin 8 (VDS 40V max)."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, shorted internally to pin 7 (VDS 40V max)."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet text has no pin table and no printed pin numbers. The pin diagram on page 1 only gives; The datasheet names the package DFN5X6B-8L, but the hint was DFN5X6-8L. I assumed they are the same ; Pin types are set to passive for sources and drains and input for gates, since MOSFET terminals have"
        ],
        "pages_sent": 9,
        "cost_usd": 0.1725,
        "at": "2026-10-22T21:18:50"
      },
      "datasheet": {
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        "pages": 9,
        "sha256": "1ca271fafb0d843e",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
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        "role": "plain",
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          0.92
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-22",
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      {
        "file": "hxy4020nf-etched.step",
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        "sha256": "e09021681efee649d7c218515c20af791104863cd22d6309147a6986a7d21762",
        "checked": "2026-10-22",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "DFN5X6-8L",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "1ca271fafb0d843ed434b34e71f247ea098c621185cfe5f073bf421b5d20086d",
      "rows": [
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          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "TC=25℃",
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          "source": "datasheet"
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          "min": -40,
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          "conditions": "TC=25℃",
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        },
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          "conditions": "TC=25℃",
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          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current (N)",
          "symbol": "ID@TC=25℃",
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          "unit": "A",
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        },
        {
          "name": "Single Pulse Avalanche Energy (N)",
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          "conditions": "VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A",
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        {
          "name": "Single Pulse Avalanche Energy (P)",
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          "max": 66,
          "conditions": "VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A",
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        },
        {
          "name": "Avalanche Current (N)",
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        {
          "name": "Total Power Dissipation (N)",
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        {
          "name": "Operating Junction Temperature Range",
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        {
          "name": "Thermal Resistance Junction-Ambient",
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          "kind": "thermal",
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          "name": "Thermal Resistance Junction-Case",
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        {
          "name": "Drain-Source Breakdown Voltage (N)",
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          "unit": "V",
          "min": 40,
          "typ": null,
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          "conditions": "VGS=0V , ID=250uA",
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        {
          "name": "Static Drain-Source On-Resistance (N)",
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          "kind": "electrical",
          "unit": "mΩ",
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          "conditions": "VGS=10V , ID=12A",
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        {
          "name": "Static Drain-Source On-Resistance (N)",
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          "typ": 24,
          "max": 30,
          "conditions": "VGS=4.5V , ID=10A",
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          "source": "datasheet"
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        {
          "name": "Gate Threshold Voltage (N)",
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          "kind": "electrical",
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          "max": 2.5,
          "conditions": "VGS=VDS , ID =250uA",
          "source_page": 2,
          "source": "datasheet"
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          "name": "Drain-Source Leakage Current (N)",
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          "kind": "electrical",
          "unit": "uA",
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          "typ": null,
          "max": 1,
          "conditions": "VDS=32V , VGS=0V , TJ=25℃",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Drain-Source Leakage Current (N)",
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          "conditions": "VDS=32V , VGS=0V , TJ=55℃",
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          "source": "datasheet"
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        {
          "name": "Gate-Source Leakage Current (N)",
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          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V , VDS=0V",
          "source_page": 2,
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        {
          "name": "Gate Resistance (N)",
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          "conditions": "VDS=0V , VGS=0V , f=1MHz",
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          "conditions": "VG=VD=0V , Force Current",
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        {
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        {
          "name": "Drain-Source Breakdown Voltage (P)",
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          "source": "datasheet"
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        {
          "name": "Static Drain-Source On-Resistance (P)",
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          "unit": "mΩ",
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          "typ": 34,
          "max": 42,
          "conditions": "VGS=-10V , ID=-8A",
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        {
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          "name": "Gate Threshold Voltage (P)",
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          "source": "datasheet"
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          "conditions": "VDS=0V , VGS=0V , f=1MHz",
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          "conditions": "VG=VD=0V , Force Current",
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        {
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          "unit": "V",
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          "conditions": "VGS=0V , IS=-1A , TJ=25℃",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance (N)",
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          "typ": 8,
          "max": null,
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          "source": "datasheet"
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        {
          "name": "Total Gate Charge (N)",
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        },
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          "name": "Gate-Drain Charge (N)",
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          "kind": "electrical",
          "unit": "nC",
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          "conditions": "VDS=20V , VGS=4.5V , ID=12A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Turn-On Delay Time (N)",
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          "kind": "timing",
          "unit": "ns",
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          "unit": "pF",
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          "typ": 593,
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          "conditions": "VDS=15V , VGS=0V , f=1MHz",
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          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Reverse Transfer Capacitance (N)",
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          "kind": "electrical",
          "unit": "pF",
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