component
HXY4020NF
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHXY4020NF
HXY MOSFET · MOSFETs · DFN5X6-8L
HXY4020NF from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 30A rated). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS limit ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -20A rated). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS limit ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, shorted internally to pin 6 (VDS -40V max). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, shorted internally to pin 5 (VDS -40V max). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, shorted internally to pin 8 (VDS 40V max). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, shorted internally to pin 7 (VDS 40V max). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N) | VDS | 40 | V | TC=25℃ | 1 | ||
| Drain-Source Voltage (P) | VDS | -40 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage (N) | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Gate-Source Voltage (P) | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current (N) | ID@TC=25℃ | 30 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (P) | ID@TC=25℃ | -20 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (N) | ID@TC=100℃ | 18 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (P) | ID@TC=100℃ | -16 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current (N) | IDM | 46 | A | 1 | |||
| Pulsed Drain Current (P) | IDM | -40 | A | 1 | |||
| Single Pulse Avalanche Energy (N) | EAS | 28 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A | 1 | ||
| Single Pulse Avalanche Energy (P) | EAS | 66 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A | 1 | ||
| Avalanche Current (N) | IAS | 17.8 | A | 1 | |||
| Avalanche Current (P) | IAS | -27.2 | A | 1 | |||
| Total Power Dissipation (N) | PD@TC=25℃ | 10.8 | W | 1 | |||
| Total Power Dissipation (P) | PD@TC=25℃ | 10.8 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage (N) | BVDSS | 40 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N) | RDS(ON) | 19 | 23 | mΩ | VGS=10V , ID=12A | 2 | |
| Static Drain-Source On-Resistance (N) | RDS(ON) | 24 | 30 | mΩ | VGS=4.5V , ID=10A | 2 | |
| Gate Threshold Voltage (N) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current (N) | IDSS | 1 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N) | IDSS | 5 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N) | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Resistance (N) | Rg | 2.6 | 5.2 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Continuous Source Current (N) | IS | 23 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current (N) | ISM | 46 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage (N) | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P) | BVDSS | -40 | V | VGS=0V , ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P) | RDS(ON) | 34 | 42 | mΩ | VGS=-10V , ID=-8A | 3 | |
| Static Drain-Source On-Resistance (P) | RDS(ON) | 67 | 84 | mΩ | VGS=-4.5V , ID=-4A | 3 | |
| Gate Threshold Voltage (P) | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS , ID =-250uA | 3 |
| Drain-Source Leakage Current (P) | IDSS | 1 | uA | VDS=-32V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P) | IDSS | 5 | uA | VDS=-32V , VGS=0V , TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P) | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 3 | |
| Gate Resistance (P) | Rg | 13 | 16 | Ω | VDS=0V , VGS=0V , f=1MHz | 3 | |
| Continuous Source Current (P) | IS | -20 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current (P) | ISM | -40 | A | VG=VD=0V , Force Current | 3 | ||
| Diode Forward Voltage (P) | VSD | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 | ||
| Forward Transconductance (N) | gfs | 8 | S | VDS=5V , ID=12A | 2 | ||
| Total Gate Charge (N) | Qg | 5.5 | nC | VDS=20V , VGS=4.5V , ID=12A | 2 | ||
| Gate-Source Charge (N) | Qgs | 1.25 | nC | VDS=20V , VGS=4.5V , ID=12A | 2 | ||
| Gate-Drain Charge (N) | Qgd | 2.5 | nC | VDS=20V , VGS=4.5V , ID=12A | 2 | ||
| Turn-On Delay Time (N) | Td(on) | 8.9 | ns | VDD=20V , VGS=10V , RG=3.3, ID=1A | 2 | ||
| Input Capacitance (N) | Ciss | 593 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance (N) | Coss | 76 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance (N) | Crss | 56 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Forward Transconductance (P) | gfs | 12.6 | S | VDS=-5V , ID=-8A | 3 | ||
| Total Gate Charge (P) | Qg | 9 | nC | VDS=-20V , VGS=-4.5V , ID=-12A | 3 | ||
| Gate-Source Charge (P) | Qgs | 2.54 | nC | VDS=-20V , VGS=-4.5V , ID=-12A | 3 | ||
| Gate-Drain Charge (P) | Qgd | 3.1 | nC | VDS=-20V , VGS=-4.5V , ID=-12A | 3 | ||
| Turn-On Delay Time (P) | Td(on) | 19.2 | ns | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 3 | ||
| Input Capacitance (P) | Ciss | 1004 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 | ||
| Output Capacitance (P) | Coss | 108 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 | ||
| Reverse Transfer Capacitance (P) | Crss | 80 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
HXY4020NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
hxy4020nf-etched.step/hxy4020nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy4020nf.step/hxy4020nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
1ca271fafb0d843e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).