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HXY3404MI

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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HXY3404MI

HXY MOSFET · MOSFETs · SOT-23-3L

HXY3404MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V.
2 D passive Drain of the N-channel MOSFET; rated 30 V drain-source, 5 A continuous drain current and 20 A pulsed drain current.
3 S passive Source of the N-channel MOSFET; drain-source diode forward current is rated 5 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 30 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=30V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) 0.8 1.4 2.2 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 24 28 mΩ VGS=10V, ID=5A 2
Drain-source on-state resistance RDS(ON) 26 32 mΩ VGS=4.5V, ID=4A 2
Diode forward voltage VSD 0.76 1.16 V VGS=0V, Is=1A 2
Drain-source voltage VDS 30 V TA=25℃ 1
Gate-source voltage VGS -20 20 V TA=25℃ 1
Drain current-continuous ID 5 A Tj=125℃ 1
Drain current-pulsed IDM 20 A 1
Drain-source diode forward current Is 5 A TA=25℃ 1
Maximum power dissipation PD 1.4 W TA=25℃ 1
Operating junction temperature range Tj -55 150 ℃ 1
Thermal resistance junction-to-ambient RthJA 100 ℃/W 1

CAD (KiCad official)

  • Symbol: HXY3404MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: hxy3404mi-etched.step / hxy3404mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy3404mi.step / hxy3404mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 0f075b176cc14993, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF