component
HXY3404MI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHXY3404MI
HXY MOSFET · MOSFETs · SOT-23-3L
HXY3404MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; rated 30 V drain-source, 5 A continuous drain current and 20 A pulsed drain current. |
| 3 | S | passive | Source of the N-channel MOSFET; drain-source diode forward current is rated 5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 0.8 | 1.4 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 24 | 28 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 26 | 32 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=1A | 2 | |
| Drain-source voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain current-continuous | ID | 5 | A | Tj=125℃ | 1 | ||
| Drain current-pulsed | IDM | 20 | A | 1 | |||
| Drain-source diode forward current | Is | 5 | A | TA=25℃ | 1 | ||
| Maximum power dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient | RthJA | 100 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HXY3404MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
hxy3404mi-etched.step/hxy3404mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy3404mi.step/hxy3404mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
0f075b176cc14993, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).