# HXY2101EI

**HXY MOSFET** · MOSFETs · SOT-323

HXY2101EI from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with a maximum gate-source voltage of ±8 V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage is rated at -20 V and continuous drain current at -1.8 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, on the single lead opposite the gate and source leads; VDS = -20 V, ID = -1.8 A continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Drain Current-Continuous | ID | -1.8 |  |  | A |  | 1 |
| Drain Current-Pulsed (Note 1) | IDM | -3 |  |  | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 0.29 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | VGS = 0V, ID =-250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | µA | VDS =-18V,VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS =±12V, VDS = 0V | 2 |
| Gate threshold voltage (note2) | VGS(th) | -0.4 | -0.7 | -1 | V | VDS =VGS, ID =-250μA | 2 |
| Drain-source on-resistance (note2) | RDS(on) |  |  | 150 | mΩ | VGS =-4.5V, ID =-2A | 2 |
| Drain-source on-resistance (note2) | RDS(on) |  |  | 230 | mΩ | VGS =-2.5V, ID =-1.0A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -1 | A |  | 2 |
| Diode forward voltage | VSD |  |  | -1.2 | V | IS=-1.0A, VGS =0V | 2 |
| Input capacitance | Ciss |  | 680 |  | pF | VDS =-8V,VGS =0V, f =1MHz | 2 |
| Output capacitance | Coss |  | 130 |  | pF |  | 2 |
| Reverse transfer capacitance | Crss |  | 95 |  | pF |  | 2 |
| Turn-on delay time | td(on) |  | 10 |  | nS | VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω | 2 |
| Turn-on rise time | tr |  | 20 |  | nS |  | 2 |
| Turn-off delay time | td(off) |  | 35 |  | nS |  | 2 |
| Turn-off fall time | tf |  | 18 |  | nS |  | 2 |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA |  | 431 |  | ℃/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `HXY2101EI`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `hxy2101ei-etched.step` / `hxy2101ei-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy2101ei.step` / `hxy2101ei.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758135270057222144) (4 pp, sha256 `f4453b2acb299b14`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy2101ei-datasheet.pdf)