component
HXY2101EI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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hxy2101ei: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ HXY2101EI from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -20 | | | V | | 1 |+| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Drain Current-Continuous | ID | -1.8 | | | A | | 1 |+| Drain Current-Pulsed (Note 1) | IDM | -3 | | | A | Note 1 | 1 |+| Maximum Power Dissipation | PD | | | 0.29 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID =-250μA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-18V,VGS = 0V | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 2 |+| Gate threshold voltage (note2) | VGS(th) | -0.4 | -0.7 | -1 | V | VDS =VGS, ID =-250μA | 2 |+| Drain-source on-resistance (note2) | RDS(on) | | | 150 | mΩ | VGS =-4.5V, ID =-2A | 2 |+| Drain-source on-resistance (note2) | RDS(on) | | | 230 | mΩ | VGS =-2.5V, ID =-1.0A | 2 |+| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -1 | A | | 2 |+| Diode forward voltage | VSD | | | -1.2 | V | IS=-1.0A, VGS =0V | 2 |+| Input capacitance | Ciss | | 680 | | pF | VDS =-8V,VGS =0V, f =1MHz | 2 |+| Output capacitance | Coss | | 130 | | pF | | 2 |+| Reverse transfer capacitance | Crss | | 95 | | pF | | 2 |+| Turn-on delay time | td(on) | | 10 | | nS | VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω | 2 |+| Turn-on rise time | tr | | 20 | | nS | | 2 |+| Turn-off delay time | td(off) | | 35 | | nS | | 2 |+| Turn-off fall time | tf | | 18 | | nS | | 2 |+| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | | 431 | | ℃/W | Note 2 | 1 |+ ## CAD (KiCad official) - Symbol: `HXY2101EI`
page.json+272−1@@ -149,6 +149,277 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f4453b2acb299b14",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.8,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed (Note 1)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3,+ "typ": null,+ "max": null,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.29,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS =-18V,VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (note2)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": -0.7,+ "max": -1,+ "conditions": "VDS =VGS, ID =-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (note2)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS =-4.5V, ID =-2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (note2)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "VGS =-2.5V, ID =-1.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain to Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "IS=-1.0A, VGS =0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 680,+ "max": null,+ "conditions": "VDS =-8V,VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 130,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 95,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Note 2)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 431,+ "max": null,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +461,4 @@ "visibility": { "public": true }-}+}