component
HXY100P03NF
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HXY100P03NF
HXY MOSFET · MOSFETs · DFN5X6-8L
HXY100P03NF from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; pin 1 is marked on the package drawing, and the device is a P-channel MOSFET rated VDS = -30V. |
| 2 | S | passive | Source, connected in parallel with the other source pins; continuous drain current is rated -100A (package limited). |
| 3 | S | passive | Source, connected in parallel with the other source pins; the body diode continuous source current is -100A. |
| 4 | G | input | Gate; gate-source voltage is rated ±20V, with a threshold of -1.2V to -2.5V. |
| 5 | D | passive | Drain, tied to the exposed drain pad; drain-source voltage is rated -30V. |
| 6 | D | passive | Drain, tied to the exposed drain pad; pulsed drain current is rated -250A. |
| 7 | D | passive | Drain, tied to the exposed drain pad; RDS(ON) is below 4 mΩ at VGS = -10V. |
| 8 | D | passive | Drain, tied to the exposed drain pad; junction-to-case thermal resistance is 1.6 ℃/W. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -100 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -100 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -70 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -250 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | VDD=-50V, VGS=-10V, L=0.1mH, IAS=-40A | 1 | ||
| Avalanche Current | IAS | -70 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 120 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.6 | ℃/W | Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
HXY100P03NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
hxy100p03nf-etched.step/hxy100p03nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy100p03nf.step/hxy100p03nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
4099aba3ae0c6397, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HXY100P03NF
**HXY MOSFET** · MOSFETs · DFN5X6-8L
HXY100P03NF from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; pin 1 is marked on the package drawing, and the device is a P-channel MOSFET rated VDS = -30V. |
| 2 | S | passive | Source, connected in parallel with the other source pins; continuous drain current is rated -100A (package limited). |
| 3 | S | passive | Source, connected in parallel with the other source pins; the body diode continuous source current is -100A. |
| 4 | G | input | Gate; gate-source voltage is rated ±20V, with a threshold of -1.2V to -2.5V. |
| 5 | D | passive | Drain, tied to the exposed drain pad; drain-source voltage is rated -30V. |
| 6 | D | passive | Drain, tied to the exposed drain pad; pulsed drain current is rated -250A. |
| 7 | D | passive | Drain, tied to the exposed drain pad; RDS(ON) is below 4 mΩ at VGS = -10V. |
| 8 | D | passive | Drain, tied to the exposed drain pad; junction-to-case thermal resistance is 1.6 ℃/W. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1.2 | | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -100 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -30 | | | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ unless otherwise noted | 1 |
| Continuous Drain Current | ID@TC=25℃ | -100 | | | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | -70 | | | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | -250 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | VDD=-50V, VGS=-10V, L=0.1mH, IAS=-40A | 1 |
| Avalanche Current | IAS | -70 | | | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 120 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 50 | ℃/W | Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.6 | ℃/W | Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper | 1 |
## CAD (KiCad official)
- Symbol: `HXY100P03NF`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `hxy100p03nf-etched.step` / `hxy100p03nf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy100p03nf.step` / `hxy100p03nf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974859131969536) (6 pp, sha256 `4099aba3ae0c6397`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hxy100p03nf-datasheet.pdf)