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HXY100P03NF

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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HXY100P03NF

HXY MOSFET · MOSFETs · DFN5X6-8L

HXY100P03NF from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source; pin 1 is marked on the package drawing, and the device is a P-channel MOSFET rated VDS = -30V.
2 S passive Source, connected in parallel with the other source pins; continuous drain current is rated -100A (package limited).
3 S passive Source, connected in parallel with the other source pins; the body diode continuous source current is -100A.
4 G input Gate; gate-source voltage is rated ±20V, with a threshold of -1.2V to -2.5V.
5 D passive Drain, tied to the exposed drain pad; drain-source voltage is rated -30V.
6 D passive Drain, tied to the exposed drain pad; pulsed drain current is rated -250A.
7 D passive Drain, tied to the exposed drain pad; RDS(ON) is below 4 mΩ at VGS = -10V.
8 D passive Drain, tied to the exposed drain pad; junction-to-case thermal resistance is 1.6 ℃/W.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -100 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V TC=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
Continuous Drain Current ID@TC=25℃ -100 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ -70 A VGS @ 10V 1
Pulsed Drain Current IDM -250 A 1
Single Pulse Avalanche Energy EAS 80 mJ VDD=-50V, VGS=-10V, L=0.1mH, IAS=-40A 1
Avalanche Current IAS -70 A 1
Total Power Dissipation PD@TC=25℃ 120 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 50 ℃/W Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 1.6 ℃/W Note 1: surface mounted on a 1 inch² FR-4 board with 2OZ copper 1

CAD (KiCad official)

  • Symbol: HXY100P03NF
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: hxy100p03nf-etched.step / hxy100p03nf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy100p03nf.step / hxy100p03nf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 4099aba3ae0c6397, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF