component
HUF75645P3
Public Made by Adomby adom
onsemi MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HUF75645P3
onsemi · MOSFETs · TO-220AB
HUF75645P3 from onsemi, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET; VGS is rated to ±20 V (Gate to Source Voltage, Absolute Maximum Ratings). |
| 2 | DRAIN | passive | Drain terminal, electrically connected to the mounting flange; rated 100 V drain-to-source (VDSS) with continuous drain current of 75 A at TC = 25°C. |
| 3 | SOURCE | passive | Source terminal of the MOSFET; the reference for VGS and the source-to-drain diode, with the source lead carrying the full drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 100 | V | Note 1: TJ = 25oC to 150oC | 1 | ||
| Drain to Gate Voltage | VDGR | 100 | V | RGS = 20kΩ (Note 1) | 1 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 75 | A | TC = 25oC, VGS = 10V (Figure 2) | 1 | ||
| Continuous Drain Current | ID | 65 | A | TC = 100oC, VGS = 10V (Figure 2) | 1 | ||
| Power Dissipation | PD | 310 | W | 1 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | oC | 1 | ||
| Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s | TL | 300 | oC | 1 | |||
| Maximum Temperature for Soldering, Package Body for 10s | Tpkg | 260 | oC | 1 | |||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Drain to Source Breakdown Voltage | BVDSS | 100 | V | ID = 250µA, VGS = 0V (Figure 11) | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 95V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 90V, VGS = 0V, TC = 150oC | 2 | ||
| Gate to Source Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250µA (Figure 10) | 2 | |
| Drain to Source On Resistance | rDS(ON) | 0.0115 | 0.014 | Ω | ID = 75A, VGS = 10V (Figure 9) | 2 | |
| Thermal Resistance Junction to Case | RθJC | 0.48 | oC/W | TO-220 and TO-263 | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62 | oC/W | 2 | |||
| Turn-On Time | tON | 197 | ns | VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) | 2 | ||
| Turn-Off Time | tOFF | 207 | ns | VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) | 2 | ||
| Total Gate Charge | Qg(TOT) | 198 | 238 | nC | VGS = 0V to 20V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 | |
| Gate Charge at 10V | Qg(10) | 106 | 127 | nC | VGS = 0V to 10V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 | |
| Threshold Gate Charge | Qg(TH) | 6.8 | 8.2 | nC | VGS = 0V to 2V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 | |
| Source to Drain Diode Voltage | VSD | 1.25 | V | ISD = 75A | 2 | ||
| Source to Drain Diode Voltage | VSD | 1 | V | ISD = 35A | 2 | ||
| Reverse Recovery Time | trr | 145 | ns | ISD = 75A, dISD/dt = 100A/µs | 2 | ||
| Reverse Recovered Charge | QRR | 360 | nC | ISD = 75A, dISD/dt = 100A/µs | 2 |
CAD (KiCad official)
- Symbol:
HUF75645P3 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
huf75645p3-etched.step/huf75645p3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);huf75645p3.step/huf75645p3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
8cb840d85b6db27d, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HUF75645P3
**onsemi** · MOSFETs · TO-220AB
HUF75645P3 from onsemi, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET; VGS is rated to ±20 V (Gate to Source Voltage, Absolute Maximum Ratings). |
| 2 | DRAIN | passive | Drain terminal, electrically connected to the mounting flange; rated 100 V drain-to-source (VDSS) with continuous drain current of 75 A at TC = 25°C. |
| 3 | SOURCE | passive | Source terminal of the MOSFET; the reference for VGS and the source-to-drain diode, with the source lead carrying the full drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | | | 100 | V | Note 1: TJ = 25oC to 150oC | 1 |
| Drain to Gate Voltage | VDGR | | | 100 | V | RGS = 20kΩ (Note 1) | 1 |
| Gate to Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 75 | A | TC = 25oC, VGS = 10V (Figure 2) | 1 |
| Continuous Drain Current | ID | | | 65 | A | TC = 100oC, VGS = 10V (Figure 2) | 1 |
| Power Dissipation | PD | | | 310 | W | | 1 |
| Operating and Storage Temperature | TJ, TSTG | -55 | | 175 | oC | | 1 |
| Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s | TL | | | 300 | oC | | 1 |
| Maximum Temperature for Soldering, Package Body for 10s | Tpkg | | | 260 | oC | | 1 |
| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 100 | | | V | ID = 250µA, VGS = 0V (Figure 11) | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 95V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 90V, VGS = 0V, TC = 150oC | 2 |
| Gate to Source Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS = VDS, ID = 250µA (Figure 10) | 2 |
| Drain to Source On Resistance | rDS(ON) | | 0.0115 | 0.014 | Ω | ID = 75A, VGS = 10V (Figure 9) | 2 |
| Thermal Resistance Junction to Case | RθJC | | | 0.48 | oC/W | TO-220 and TO-263 | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 62 | oC/W | | 2 |
| Turn-On Time | tON | | | 197 | ns | VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) | 2 |
| Turn-Off Time | tOFF | | | 207 | ns | VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) | 2 |
| Total Gate Charge | Qg(TOT) | | 198 | 238 | nC | VGS = 0V to 20V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 |
| Gate Charge at 10V | Qg(10) | | 106 | 127 | nC | VGS = 0V to 10V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 |
| Threshold Gate Charge | Qg(TH) | | 6.8 | 8.2 | nC | VGS = 0V to 2V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) | 2 |
| Source to Drain Diode Voltage | VSD | | | 1.25 | V | ISD = 75A | 2 |
| Source to Drain Diode Voltage | VSD | | | 1 | V | ISD = 35A | 2 |
| Reverse Recovery Time | trr | | | 145 | ns | ISD = 75A, dISD/dt = 100A/µs | 2 |
| Reverse Recovered Charge | QRR | | | 360 | nC | ISD = 75A, dISD/dt = 100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `HUF75645P3`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `huf75645p3-etched.step` / `huf75645p3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `huf75645p3.step` / `huf75645p3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896765420982272) (10 pp, sha256 `8cb840d85b6db27d`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/huf75645p3-datasheet.pdf)