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HUF75645P3

Public Made by Adom

by adom

onsemi MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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HUF75645P3

onsemi · MOSFETs · TO-220AB

HUF75645P3 from onsemi, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the MOSFET; VGS is rated to ±20 V (Gate to Source Voltage, Absolute Maximum Ratings).
2 DRAIN passive Drain terminal, electrically connected to the mounting flange; rated 100 V drain-to-source (VDSS) with continuous drain current of 75 A at TC = 25°C.
3 SOURCE passive Source terminal of the MOSFET; the reference for VGS and the source-to-drain diode, with the source lead carrying the full drain current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 100 V Note 1: TJ = 25oC to 150oC 1
Drain to Gate Voltage VDGR 100 V RGS = 20kΩ (Note 1) 1
Gate to Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 75 A TC = 25oC, VGS = 10V (Figure 2) 1
Continuous Drain Current ID 65 A TC = 100oC, VGS = 10V (Figure 2) 1
Power Dissipation PD 310 W 1
Operating and Storage Temperature TJ, TSTG -55 175 oC 1
Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s TL 300 oC 1
Maximum Temperature for Soldering, Package Body for 10s Tpkg 260 oC 1
Gate to Source Leakage Current IGSS -100 100 nA VGS = ±20V 2
Drain to Source Breakdown Voltage BVDSS 100 V ID = 250µA, VGS = 0V (Figure 11) 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 95V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 90V, VGS = 0V, TC = 150oC 2
Gate to Source Threshold Voltage VGS(TH) 2 4 V VGS = VDS, ID = 250µA (Figure 10) 2
Drain to Source On Resistance rDS(ON) 0.0115 0.014 Ω ID = 75A, VGS = 10V (Figure 9) 2
Thermal Resistance Junction to Case RθJC 0.48 oC/W TO-220 and TO-263 2
Thermal Resistance Junction to Ambient RθJA 62 oC/W 2
Turn-On Time tON 197 ns VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) 2
Turn-Off Time tOFF 207 ns VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.5Ω (Figures 18, 19) 2
Total Gate Charge Qg(TOT) 198 238 nC VGS = 0V to 20V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 2
Gate Charge at 10V Qg(10) 106 127 nC VGS = 0V to 10V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 2
Threshold Gate Charge Qg(TH) 6.8 8.2 nC VGS = 0V to 2V, VDD = 50V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 2
Source to Drain Diode Voltage VSD 1.25 V ISD = 75A 2
Source to Drain Diode Voltage VSD 1 V ISD = 35A 2
Reverse Recovery Time trr 145 ns ISD = 75A, dISD/dt = 100A/µs 2
Reverse Recovered Charge QRR 360 nC ISD = 75A, dISD/dt = 100A/µs 2

CAD (KiCad official)

  • Symbol: HUF75645P3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: huf75645p3-etched.step / huf75645p3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); huf75645p3.step / huf75645p3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 8cb840d85b6db27d, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF