component
HTW083Z65C
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373
{
"schema_version": 1,
"type": "component",
"slug": "htw083z65c",
"title": "HTW083Z65C",
"brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"silicon carbide (sic) devices",
"htw083z65c",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "HTW083Z65C",
"manufacturer": "HXY MOSFET",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/c6951cb87ad30cc3da524f3d49950cba.pdf",
"parts": {
"symbol": "htw083z65c.kicad_sym",
"footprint": "htw083z65c.kicad_mod",
"model_3d": "htw083z65c-hero.glb",
"model_3d_plain": "htw083z65c-etched.glb",
"model_3d_step": "htw083z65c-etched.step",
"model_3d_step_plain": "htw083z65c.step",
"lbr": "htw083z65c.lbr"
},
"distributor_links": {
"lcsc": "C42389120"
},
"distributor_check": {
"checked_at": "2026-11-04T12:52:59Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, also the metal tab, for the SiC MOSFET whose drain-source voltage is rated VDSS = 650 V at TC = 25 °C."
},
{
"number": "2",
"name": "Power Source",
"type": "passive",
"description": "Main power source terminal carrying the MOSFET drain current, rated at ID = 37 A continuous with VGS = 15 V and TC = 25 °C."
},
{
"number": "3",
"name": "Driver Source",
"type": "passive",
"description": "Separate driver source pin provided alongside the power source so the gate drive return can be kept apart from the power current path, which the datasheet cites for reduced gate ringing."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate input with recommended turn-on VGS of 15 V and turn-off VGS of -4 V, and transient limits of -8 V / +19 V for events under 100 ns."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Package name mismatch: the hint says TO-247-4L, but the datasheet prints TO-247H-4L on the ordering ; The datasheet names pin 3 as Driver Source and says the package has a separate driver source pin, bu; Pin types for the drain and source pins are set to passive, which is the usual KiCad class for MOSFE"
],
"pages_sent": 12,
"cost_usd": 0.0496,
"at": "2026-11-04T12:52:50"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/c6951cb87ad30cc3da524f3d49950cba.pdf",
"pages": 12,
"sha256": "7c30b7068a60dcca",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 4,
"described": 4,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "htw083z65c.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "htw083z65c-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "b33508c21ac1193fd8a34bb624219d3f697810c38124d0b697820f4289f560f3",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HXY MOSFET",
"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "7c30b7068a60dcca68d391a2637295c13b48cf19cde3c7fc743ff9ab144aa32c",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 650,
"conditions": "TC = 25 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source voltage (transient)",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -8,
"typ": null,
"max": 19,
"conditions": "Under transient events < 100 ns",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 37,
"conditions": "VGS = 15 V, TC = 25 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 27,
"conditions": "VGS = 15 V, TC = 100 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "ID(pulse)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 99,
"conditions": "Pulse width tP limited by Tjmax",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 150,
"conditions": "TC = 25 ˚C, TJ = 175 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -40,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Solder Temperature",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 260,
"conditions": "1.6 mm (0.063 in) from case for 10 s",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Recommended Turn-On Voltage",
"symbol": "VGSon",
"kind": "recommended_operating",
"unit": "V",
"min": null,
"typ": 15,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Recommended Turn-Off Voltage",
"symbol": "VGSoff",
"kind": "recommended_operating",
"unit": "V",
"min": null,
"typ": -4,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1.8,
"typ": 2.3,
"max": 3.6,
"conditions": "VDS = VGS, ID = 5 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": 42,
"typ": 60,
"max": 79,
"conditions": "VGS = 15 V, ID = 13.2 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance from Junction to Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 0.99,
"max": null,
"conditions": "Fig. 21",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal Resistance From Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 40,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"htw083z65c"
],
"discovery_pitch": "HTW083Z65C (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"htw083z65c.kicad_sym",
"htw083z65c.kicad_mod",
"htw083z65c.glb",
"htw083z65c.step",
"htw083z65c.lbr",
"docs/hero.png",
"docs/htw083z65c-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"htw083z65c-hero.glb",
"htw083z65c-hero.overlay.json",
"htw083z65c-etched.glb"
],
"visibility": {
"public": true
}
}