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HTW083Z65C

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshtw083z65cfactory-2.0.0extractor-text

Changed since verified HTW083Z65C

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HTW083Z65C · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 12-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-7l1git3n/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! htw083z65c.kicad_sym✓ htw083z65c.kicad_mod✓ htw083z65c.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HTW083Z65C

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HTW083Z65C from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also the metal tab, for the SiC MOSFET whose drain-source voltage is rated VDSS = 650 V at TC = 25 °C.
2 Power Source passive Main power source terminal carrying the MOSFET drain current, rated at ID = 37 A continuous with VGS = 15 V and TC = 25 °C.
3 Driver Source passive Separate driver source pin provided alongside the power source so the gate drive return can be kept apart from the power current path, which the datasheet cites for reduced gate ringing.
4 Gate input Gate input with recommended turn-on VGS of 15 V and turn-off VGS of -4 V, and transient limits of -8 V / +19 V for events under 100 ns.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V TC = 25 ˚C 1
Gate-Source voltage (transient) VGS -8 19 V Under transient events < 100 ns 1
Continuous Drain Current ID 37 A VGS = 15 V, TC = 25 ˚C 1
Continuous Drain Current ID 27 A VGS = 15 V, TC = 100 ˚C 1
Pulsed Drain Current ID(pulse) 99 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 150 W TC = 25 ˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 °C 1
Solder Temperature TL 260 °C 1.6 mm (0.063 in) from case for 10 s 1
Gate-Source Recommended Turn-On Voltage VGSon 15 V 2
Gate-Source Recommended Turn-Off Voltage VGSoff -4 V 2
Gate Threshold Voltage VGS(th) 1.8 2.3 3.6 V VDS = VGS, ID = 5 mA 2
Drain-Source On-State Resistance RDS(on) 42 60 79 mΩ VGS = 15 V, ID = 13.2 A 2
Thermal Resistance from Junction to Case RθJC 0.99 °C/W Fig. 21 3
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 3

CAD (KiCad official)

  • Symbol: HTW083Z65C
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: htw083z65c-etched.step / htw083z65c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); htw083z65c.step / htw083z65c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (12 pp, sha256 7c30b7068a60dcca, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF