# HSW6604

**HUASHUO** · MOSFETs · SOT-23-6L

HSW6604 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rating 20 V (N-channel) or -20 V (P-channel). |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rating 20 V (N-channel) or -20 V (P-channel). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS |  |  | 20 | V |  | 1 |
| Drain-Source Voltage (P-channel) | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage (N-channel) | VGS | -12 |  | 12 | V |  | 1 |
| Gate-Source Voltage (P-channel) | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (N-channel) | ID@TA=25℃ |  |  | 4 | A | TA=25℃, VGS @ -4.5V (as printed) | 1 |
| Continuous Drain Current (P-channel) | ID@TA=25℃ |  |  | -3 | A | TA=25℃, VGS @ -4.5V (as printed) | 1 |
| Continuous Drain Current (N-channel) | ID@TA=70℃ |  |  | 3 | A | TA=70℃, VGS @ -4.5V (as printed) | 1 |
| Continuous Drain Current (P-channel) | ID@TA=70℃ |  |  | -2.6 | A | TA=70℃, VGS @ -4.5V (as printed) | 1 |
| Pulsed Drain Current (N-channel) | IDM |  |  | 16 | A |  | 1 |
| Pulsed Drain Current (P-channel) | IDM |  |  | -12.8 | A |  | 1 |
| Total Power Dissipation (N-channel) | PD@TA=25℃ |  |  | 1.1 | W | TA=25℃ | 1 |
| Total Power Dissipation (P-channel) | PD@TA=25℃ |  |  | 1.1 | W | TA=25℃ | 1 |
| Storage Temperature Range (both channels) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (both channels) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 100 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) |  | 38 | 48 | mΩ | VGS=4.5V, ID=3A | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) |  | 45 | 55 | mΩ | VGS=2.5V, ID=2A | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.5 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-channel) | IDSS |  |  | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-channel) | IDSS |  |  | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-channel) | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Continuous Source Current (N-channel diode) | IS |  |  | 1.8 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage (N-channel) | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 |  |  | V | VGS=0V, ID=-250uA | 5 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) |  | 64 | 80 | mΩ | VGS=-4.5V, ID=-3A | 5 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) |  | 82 | 120 | mΩ | VGS=-2.5V, ID=-2A | 5 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.65 | -1.2 | V | VGS=VDS, ID=-250uA | 5 |
| Drain-Source Leakage Current (P-channel) | IDSS |  |  | -1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 5 |
| Drain-Source Leakage Current (P-channel) | IDSS |  |  | -5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 5 |
| Gate-Source Leakage Current (P-channel) | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 5 |
| Continuous Source Current (P-channel diode) | IS |  |  | -1.8 | A | VG=VD=0V, Force Current | 5 |
| Diode Forward Voltage (P-channel) | VSD |  | -0.81 | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 |

## CAD (KiCad official)

- Symbol: `HSW6604`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `hsw6604-etched.step` / `hsw6604-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsw6604.step` / `hsw6604.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800587951906816) (9 pp, sha256 `0bf19333d137b351`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsw6604-datasheet.pdf)