component
HSW6604
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSW6604
HUASHUO · MOSFETs · SOT-23-6L
HSW6604 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rating 20 V (N-channel) or -20 V (P-channel). |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rating 20 V (N-channel) or -20 V (P-channel). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-channel) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-channel) | ID@TA=25℃ | 4 | A | TA=25℃, VGS @ -4.5V (as printed) | 1 | ||
| Continuous Drain Current (P-channel) | ID@TA=25℃ | -3 | A | TA=25℃, VGS @ -4.5V (as printed) | 1 | ||
| Continuous Drain Current (N-channel) | ID@TA=70℃ | 3 | A | TA=70℃, VGS @ -4.5V (as printed) | 1 | ||
| Continuous Drain Current (P-channel) | ID@TA=70℃ | -2.6 | A | TA=70℃, VGS @ -4.5V (as printed) | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 16 | A | 1 | |||
| Pulsed Drain Current (P-channel) | IDM | -12.8 | A | 1 | |||
| Total Power Dissipation (N-channel) | PD@TA=25℃ | 1.1 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-channel) | PD@TA=25℃ | 1.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range (both channels) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (both channels) | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 38 | 48 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 45 | 55 | mΩ | VGS=2.5V, ID=2A | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.5 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-channel) | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-channel) | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current (N-channel diode) | IS | 1.8 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage (N-channel) | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 | V | VGS=0V, ID=-250uA | 5 | ||
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 64 | 80 | mΩ | VGS=-4.5V, ID=-3A | 5 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 82 | 120 | mΩ | VGS=-2.5V, ID=-2A | 5 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.65 | -1.2 | V | VGS=VDS, ID=-250uA | 5 |
| Drain-Source Leakage Current (P-channel) | IDSS | -1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 5 | ||
| Drain-Source Leakage Current (P-channel) | IDSS | -5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 5 | ||
| Gate-Source Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 5 | |
| Continuous Source Current (P-channel diode) | IS | -1.8 | A | VG=VD=0V, Force Current | 5 | ||
| Diode Forward Voltage (P-channel) | VSD | -0.81 | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 |
CAD (KiCad official)
- Symbol:
HSW6604 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
hsw6604-etched.step/hsw6604-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsw6604.step/hsw6604.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (9 pp, sha256
0bf19333d137b351, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).