# HSU80N03

**HUASHUO** · MOSFETs · TO-252-2

HSU80N03 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.0 to 2.5 V at ID=250uA. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage 30 V max, continuous drain current 80 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 80 A max, body diode forward voltage 1 V max at IS=1A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 80 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 57 | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 320 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 300 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=53.8A | 1 |
| Total Power Dissipation | PD |  |  | 115 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 2.4 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 50 | ℃/W | Steady state | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 25 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 0.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.5 | 6 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 6.5 | 10 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Forward Transconductance | gfs | 20 |  |  | S | VDS=5V, ID=30A | 2 |
| Gate Resistance | Rg |  | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 80 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 160 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU80N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu80n03-etched.step` / `hsu80n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu80n03.step` / `hsu80n03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799140002938880) (6 pp, sha256 `21b88bbee95cb892`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu80n03-datasheet.pdf)