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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
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viewers	hsu80n03: viewers · Ray	8d ago
hsu80n03-etched.glb	Publish 0.1.0 · Ray	8d ago
hsu80n03-etched.step	hsu80n03: factory component page (tier=lcsc) · Ray	8d ago
hsu80n03-hero.glb	hsu80n03: hero GLB from the etched model (keeps the MPN mark) · Ray	8d ago
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hsu80n03.step	Publish 0.1.0 · Ray	8d ago
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HSU80N03

HUASHUO · MOSFETs · TO-252-2

HSU80N03 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±20 V, threshold 1.0 to 2.5 V at ID=250uA.
2	D	passive	Drain (exposed tab); drain-source voltage 30 V max, continuous drain current 80 A at TC=25℃.
3	S	passive	Source; continuous source current 80 A max, body diode forward voltage 1 V max at IS=1A.

Key specifications

Parameter	Value
Manufacturer	HUASHUO
Package	TO-252-2
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			30	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			80	A	VGS @ 10V, TC=25℃	1
Continuous Drain Current	ID			57	A	VGS @ 10V, TC=100℃	1
Pulsed Drain Current	IDM			320	A		1
Single Pulse Avalanche Energy	EAS			300	mJ	VDD=25V, VGS=10V, L=0.1mH, IAS=53.8A	1
Total Power Dissipation	PD			115	W	TC=25℃	1
Total Power Dissipation	PD			2.4	W	TA=25℃	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-ambient (Steady State)	RθJA			50	℃/W	Steady state	1
Thermal Resistance Junction-Ambient	RθJA			25	℃/W	t ≤10s	1
Thermal Resistance Junction-Case	RθJC			0.8	℃/W		1
Drain-Source Breakdown Voltage	BVDSS	30			V	VGS=0V, ID=250uA	2
Static Drain-Source On-Resistance	RDS(ON)		4.5	6	mΩ	VGS=10V, ID=30A	2
Static Drain-Source On-Resistance	RDS(ON)		6.5	10	mΩ	VGS=4.5V, ID=15A	2
Gate Threshold Voltage	VGS(th)	1	1.5	2.5	V	VGS=VDS, ID=250uA	2
Drain-Source Leakage Current	IDSS			1	uA	VDS=24V, VGS=0V, TJ=25℃	2
Drain-Source Leakage Current	IDSS			5	uA	VDS=24V, VGS=0V, TJ=55℃	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V, VDS=0V	2
Forward Transconductance	gfs	20			S	VDS=5V, ID=30A	2
Gate Resistance	Rg		1.7	3.4	Ω	VDS=0V, VGS=0V, f=1MHz	2
Continuous Source Current	IS			80	A	VG=VD=0V, Force Current	2
Pulsed Source Current	ISM			160	A		2
Diode Forward Voltage	VSD			1	V	VGS=0V, IS=1A, TJ=25℃	2

CAD (KiCad official)

Symbol: HSU80N03
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2 (KiCad packages3D, STEP)
3D model files: hsu80n03-etched.step / hsu80n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu80n03.step / hsu80n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUASHUO datasheet (6 pp, sha256 21b88bbee95cb892, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF