component
HSU60P03
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSU60P03
HUASHUO · MOSFETs · TO-252-2
HSU60P03 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS rated ±20 V absolute maximum, with threshold of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, the exposed mounting tab (shown as the top terminal in the pin diagram); VDS rated -30 V and continuous ID -60 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current IS is -60 A max and pulsed source current ISM is -160 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -35 | A | TC=100℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -17 | A | TA=25℃, VGS @ -10V, 10s | 1 | ||
| Continuous Drain Current | ID | -11 | A | TA=25℃, VGS @ -10V, steady state | 1 | ||
| Continuous Drain Current | ID | -14 | A | TA=70℃, VGS @ -10V, 10s | 1 | ||
| Continuous Drain Current | ID | -8.5 | A | TA=70℃, VGS @ -10V, steady state | 1 | ||
| Pulsed Drain Current | IDM | -160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 145 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A | 1 | ||
| Avalanche Current | IAS | -30 | A | 1 | |||
| Total Power Dissipation (TC=25℃) | PD | 52.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6.4 | 7.5 | mΩ | VGS=-10V, ID=-30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 12 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Continuous Source Current | IS | -60 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -160 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU60P03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu60p03-etched.step/hsu60p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu60p03.step/hsu60p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
6aeb62cb855125ef, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSU60P03
**HUASHUO** · MOSFETs · TO-252-2
HSU60P03 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS rated ±20 V absolute maximum, with threshold of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, the exposed mounting tab (shown as the top terminal in the pin diagram); VDS rated -30 V and continuous ID -60 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current IS is -60 A max and pulsed source current ISM is -160 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -60 | | | A | TC=25℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -35 | | | A | TC=100℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -17 | | | A | TA=25℃, VGS @ -10V, 10s | 1 |
| Continuous Drain Current | ID | -11 | | | A | TA=25℃, VGS @ -10V, steady state | 1 |
| Continuous Drain Current | ID | -14 | | | A | TA=70℃, VGS @ -10V, 10s | 1 |
| Continuous Drain Current | ID | -8.5 | | | A | TA=70℃, VGS @ -10V, steady state | 1 |
| Pulsed Drain Current | IDM | -160 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 145 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A | 1 |
| Avalanche Current | IAS | -30 | | | A | | 1 |
| Total Power Dissipation (TC=25℃) | PD | | | 52.1 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 25 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.4 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.4 | 7.5 | mΩ | VGS=-10V, ID=-30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 12 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -60 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -160 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSU60P03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu60p03-etched.step` / `hsu60p03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu60p03.step` / `hsu60p03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800475553218560) (6 pp, sha256 `6aeb62cb855125ef`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsu60p03-datasheet.pdf)