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HSU60P03

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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hsu60p03-hero.glb hsu60p03: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
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HSU60P03

HUASHUO · MOSFETs · TO-252-2

HSU60P03 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS rated ±20 V absolute maximum, with threshold of -1.0 V min to -2.5 V max at ID=-250uA.
2 D passive Drain, the exposed mounting tab (shown as the top terminal in the pin diagram); VDS rated -30 V and continuous ID -60 A at TC=25℃.
3 S passive Source; continuous source current IS is -60 A max and pulsed source current ISM is -160 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -60 A TC=25℃, VGS @ -10V 1
Continuous Drain Current ID -35 A TC=100℃, VGS @ -10V 1
Continuous Drain Current ID -17 A TA=25℃, VGS @ -10V, 10s 1
Continuous Drain Current ID -11 A TA=25℃, VGS @ -10V, steady state 1
Continuous Drain Current ID -14 A TA=70℃, VGS @ -10V, 10s 1
Continuous Drain Current ID -8.5 A TA=70℃, VGS @ -10V, steady state 1
Pulsed Drain Current IDM -160 A 1
Single Pulse Avalanche Energy EAS 145 mJ VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A 1
Avalanche Current IAS -30 A 1
Total Power Dissipation (TC=25℃) PD 52.1 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 6.4 7.5 mΩ VGS=-10V, ID=-30A 2
Static Drain-Source On-Resistance RDS(ON) 10 12 mΩ VGS=-4.5V, ID=-15A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Continuous Source Current IS -60 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -160 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU60P03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu60p03-etched.step / hsu60p03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu60p03.step / hsu60p03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 6aeb62cb855125ef, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF