component
HSU6008
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HUASHUO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSU6008
HUASHUO · MOSFETs · TO-252
HSU6008 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the pin configuration drawing shows it on the left lead, with a gate-source voltage limit of ±20 V and a threshold of 1.2 to 2.5 V. |
| 2 | D | passive | Drain, the middle lead and the exposed tab; rated for VDS of 60 V and continuous ID of 10 A at Tc=25℃. |
| 3 | S | passive | Source; the pin configuration drawing shows it on the right lead, with continuous source current up to 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | VGS @ 10V, Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 7 | A | VGS @ 10V, Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Total Power Dissipation | PD | 20.8 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 90 | mΩ | VGS=10V, ID=10A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=4.5V, ID=8A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Total Gate Charge (4.5V) | Qg | 5 | 7 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 | |
| Gate-Source Charge | Qgs | 1.68 | 2.4 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 | |
| Gate-Drain Charge | Qgd | 1.9 | 2.7 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 | |
| Input Capacitance | Ciss | 511 | 715 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 38 | 53 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 25 | 35 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 10 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 20 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU6008 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hsu6008-etched.step/hsu6008-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu6008.step/hsu6008.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
23e8f958b6e751aa, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSU6008
**HUASHUO** · MOSFETs · TO-252
HSU6008 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the pin configuration drawing shows it on the left lead, with a gate-source voltage limit of ±20 V and a threshold of 1.2 to 2.5 V. |
| 2 | D | passive | Drain, the middle lead and the exposed tab; rated for VDS of 60 V and continuous ID of 10 A at Tc=25℃. |
| 3 | S | passive | Source; the pin configuration drawing shows it on the right lead, with continuous source current up to 10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 10 | A | VGS @ 10V, Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 7 | A | VGS @ 10V, Tc=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Total Power Dissipation | PD | | | 20.8 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 6 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 90 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 100 | mΩ | VGS=4.5V, ID=8A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Total Gate Charge (4.5V) | Qg | | 5 | 7 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 |
| Gate-Source Charge | Qgs | | 1.68 | 2.4 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 |
| Gate-Drain Charge | Qgd | | 1.9 | 2.7 | nC | VDS=48V, VGS=4.5V, ID=10A | 2 |
| Input Capacitance | Ciss | | 511 | 715 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 38 | 53 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 25 | 35 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 10 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 20 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSU6008`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hsu6008-etched.step` / `hsu6008-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu6008.step` / `hsu6008.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800068298612736) (6 pp, sha256 `23e8f958b6e751aa`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsu6008-datasheet.pdf)