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HSU6008

HUASHUO · MOSFETs · TO-252

HSU6008 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the pin configuration drawing shows it on the left lead, with a gate-source voltage limit of ±20 V and a threshold of 1.2 to 2.5 V.
2 D passive Drain, the middle lead and the exposed tab; rated for VDS of 60 V and continuous ID of 10 A at Tc=25℃.
3 S passive Source; the pin configuration drawing shows it on the right lead, with continuous source current up to 10 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 10 A VGS @ 10V, Tc=25℃ 1
Continuous Drain Current ID 7 A VGS @ 10V, Tc=100℃ 1
Pulsed Drain Current IDM 20 A 1
Total Power Dissipation PD 20.8 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 100 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge (4.5V) Qg 5 7 nC VDS=48V, VGS=4.5V, ID=10A 2
Gate-Source Charge Qgs 1.68 2.4 nC VDS=48V, VGS=4.5V, ID=10A 2
Gate-Drain Charge Qgd 1.9 2.7 nC VDS=48V, VGS=4.5V, ID=10A 2
Input Capacitance Ciss 511 715 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 38 53 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 25 35 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 10 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 20 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU6008
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hsu6008-etched.step / hsu6008-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu6008.step / hsu6008.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 23e8f958b6e751aa, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF