# HSU55N02

**HUASHUO** · MOSFETs · TO-252

HSU55N02 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V max, with threshold VGS(th) of 0.5 to 0.9 V at ID=250uA. |
| 2 | D | passive | Drain, connected to the tab; VDS is rated 20 V and continuous drain current is 55 A at TC=25°C. |
| 3 | S | passive | Source; continuous source (body diode) current is 55 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current, TC=25℃ | ID |  |  | 55 | A | VGS @ 10V | 1 |
| Continuous Drain Current, TC=100℃ | ID |  |  | 40 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 220 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 135 | mJ |  | 1 |
| Total Power Dissipation, TC=25℃ | PD |  |  | 29 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 62 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 4 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.028 |  | V/℃ | Reference to 25℃, ID=1mA | 2 |
| Static Drain-Source On-Resistance, VGS=4.5V | RDS(ON) |  | 5.3 | 7 | mΩ | VGS=4.5V, ID=20A | 2 |
| Static Drain-Source On-Resistance, VGS=2.5V | RDS(ON) |  | 6.5 | 8.6 | mΩ | VGS=2.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 0.9 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -6.16 |  | mV/℃ |  | 2 |
| Drain-Source Leakage Current, TJ=25℃ | IDSS |  |  | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current, TJ=55℃ | IDSS |  |  | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Forward Transconductance | gfs | 10 |  |  | S | VDS=10V, ID=20A | 2 |
| Gate Resistance | Rg |  | 1.2 |  |  | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg |  | 23 |  | nC | VDS=20V, VGS=10V, ID=20A | 2 |
| Gate-Source Charge | Qgs |  | 4.5 |  | nC | VDS=20V, VGS=10V, ID=20A | 2 |
| Gate-Drain Charge | Qgd |  | 7.5 |  | nC | VDS=20V, VGS=10V, ID=20A | 2 |
| Turn-On Delay Time | Td(on) |  | 15 |  | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=15A | 2 |
| Rise Time | Tr |  | 33 |  | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=15A | 2 |
| Turn-Off Delay Time | Td(off) |  | 44 |  | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=15A | 2 |
| Fall Time | Tf |  | 95 |  | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=15A | 2 |
| Input Capacitance | Ciss |  | 2250 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 200 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 125 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 55 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 220 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |
| Reverse Recovery Time | trr |  | 12 |  | nS | IF=20A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 2.6 |  | nC | IF=20A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU55N02`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hsu55n02-etched.step` / `hsu55n02-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu55n02.step` / `hsu55n02.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590916853961613312) (5 pp, sha256 `6c47da6cac4eb9fc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu55n02-datasheet.pdf)