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HSU55N02

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HUASHUO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HSU55N02

HUASHUO · MOSFETs · TO-252

HSU55N02 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±12 V max, with threshold VGS(th) of 0.5 to 0.9 V at ID=250uA.
2 D passive Drain, connected to the tab; VDS is rated 20 V and continuous drain current is 55 A at TC=25°C.
3 S passive Source; continuous source (body diode) current is 55 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current, TC=25℃ ID 55 A VGS @ 10V 1
Continuous Drain Current, TC=100℃ ID 40 A VGS @ 10V 1
Pulsed Drain Current IDM 220 A 1
Single Pulse Avalanche Energy EAS 135 mJ 1
Total Power Dissipation, TC=25℃ PD 29 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.028 V/℃ Reference to 25℃, ID=1mA 2
Static Drain-Source On-Resistance, VGS=4.5V RDS(ON) 5.3 7 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance, VGS=2.5V RDS(ON) 6.5 8.6 mΩ VGS=2.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 0.5 0.9 V VGS=VDS, ID=250uA 2
VGS(th) Temperature Coefficient △VGS(th) -6.16 mV/℃ 2
Drain-Source Leakage Current, TJ=25℃ IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current, TJ=55℃ IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Forward Transconductance gfs 10 S VDS=10V, ID=20A 2
Gate Resistance Rg 1.2 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 23 nC VDS=20V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 4.5 nC VDS=20V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 7.5 nC VDS=20V, VGS=10V, ID=20A 2
Turn-On Delay Time Td(on) 15 ns VDD=10V, VGS=4.5V, RG=3.3, ID=15A 2
Rise Time Tr 33 ns VDD=10V, VGS=4.5V, RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 44 ns VDD=10V, VGS=4.5V, RG=3.3, ID=15A 2
Fall Time Tf 95 ns VDD=10V, VGS=4.5V, RG=3.3, ID=15A 2
Input Capacitance Ciss 2250 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 200 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 125 pF VDS=10V, VGS=0V, f=1MHz 2
Continuous Source Current IS 55 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 220 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=20A, TJ=25℃ 2
Reverse Recovery Time trr 12 nS IF=20A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 2.6 nC IF=20A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU55N02
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hsu55n02-etched.step / hsu55n02-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu55n02.step / hsu55n02.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (5 pp, sha256 6c47da6cac4eb9fc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF