# HSU4P25

**HUASHUO** · MOSFETs · TO-252

HSU4P25 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -2.0 to -4.0 V (typ. -3.0 V) at ID=-250uA. |
| 2 | D | passive | Drain (center pin, also connected to the exposed tab); drain-source voltage rated -250 V, continuous drain current -4.0 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current -1.0 A, diode forward voltage max -1.3 V at IS=-1A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -250 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -4 |  |  | A | TC=25℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -3 |  |  | A | TC=70℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -1 |  |  | A | TA=25℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -0.7 |  |  | A | TA=70℃, VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -6 |  |  | A | Pulse width ≤300us, duty cycle ≤2% (Note 2) | 1 |
| Total Power Dissipation | PD |  |  | 2 | W | TA=25℃ (Note 3: limited by 150℃ junction temperature) | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 65 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 8 | ℃/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -250 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3.3 | 4 | Ω | VGS=-10V, ID=-0.3A (Note 2: pulsed, pulse width ≤300us, duty cycle ≤2%) | 2 |
| Gate Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-200V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=-200V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -1 | A | VG=VD=0V, Force Current (Notes 1,4) | 2 |
| Diode Forward Voltage | VSD |  |  | -1.3 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU4P25`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hsu4p25-etched.step` / `hsu4p25-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu4p25.step` / `hsu4p25.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757801409197035520) (6 pp, sha256 `be0989b839477289`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu4p25-datasheet.pdf)