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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	16d ago
viewers	hsu4p25: viewers · Ray	16d ago
hsu4p25-etched.glb	Publish 0.1.0 · Ray	16d ago
hsu4p25-etched.step	hsu4p25: factory component page (tier=lcsc) · Ray	16d ago
hsu4p25-hero.glb	hsu4p25: hero GLB from the etched model (keeps the MPN mark) · Ray	16d ago
hsu4p25-hero.overlay.json	Publish 0.1.0 · Ray	16d ago
hsu4p25.glb	Publish 0.1.0 · Ray	16d ago
hsu4p25.kicad_mod	Publish 0.1.0 · Ray	16d ago
hsu4p25.kicad_sym	Publish 0.1.0 · Ray	16d ago
hsu4p25.lbr	Publish 0.1.0 · Ray	16d ago
hsu4p25.step	Publish 0.1.0 · Ray	16d ago
package.json	Publish 0.1.0 · Ray	16d ago
page.json	Set visibility: public · Ray	16d ago
README.md	Publish 0.1.0 · Ray	16d ago

HSU4P25

HUASHUO · MOSFETs · TO-252

HSU4P25 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -2.0 to -4.0 V (typ. -3.0 V) at ID=-250uA.
2	D	passive	Drain (center pin, also connected to the exposed tab); drain-source voltage rated -250 V, continuous drain current -4.0 A at TC=25℃.
3	S	passive	Source; continuous source (body diode) current -1.0 A, diode forward voltage max -1.3 V at IS=-1A.

Key specifications

Parameter	Value
Manufacturer	HUASHUO
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS	-250			V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID	-4			A	TC=25℃, VGS @ -10V	1
Continuous Drain Current	ID	-3			A	TC=70℃, VGS @ -10V	1
Continuous Drain Current	ID	-1			A	TA=25℃, VGS @ -10V	1
Continuous Drain Current	ID	-0.7			A	TA=70℃, VGS @ -10V	1
Pulsed Drain Current	IDM	-6			A	Pulse width ≤300us, duty cycle ≤2% (Note 2)	1
Total Power Dissipation	PD			2	W	TA=25℃ (Note 3: limited by 150℃ junction temperature)	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-ambient	RθJA			65	℃/W	Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper	1
Thermal Resistance Junction-Case	RθJC			8	℃/W	Note 1	1
Drain-Source Breakdown Voltage	BVDSS	-250			V	VGS=0V, ID=-250uA	2
Static Drain-Source On-Resistance	RDS(ON)		3.3	4	Ω	VGS=-10V, ID=-0.3A (Note 2: pulsed, pulse width ≤300us, duty cycle ≤2%)	2
Gate Threshold Voltage	VGS(th)	-2	-3	-4	V	VGS=VDS, ID=-250uA	2
Drain-Source Leakage Current	IDSS			1	uA	VDS=-200V, VGS=0V, TJ=25℃	2
Drain-Source Leakage Current	IDSS			10	uA	VDS=-200V, VGS=0V, TJ=55℃	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V, VDS=0V	2
Continuous Source Current	IS			-1	A	VG=VD=0V, Force Current (Notes 1,4)	2
Diode Forward Voltage	VSD			-1.3	V	VGS=0V, IS=-1A, TJ=25℃	2

CAD (KiCad official)

Symbol: HSU4P25
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: hsu4p25-etched.step / hsu4p25-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu4p25.step / hsu4p25.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUASHUO datasheet (6 pp, sha256 be0989b839477289, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF