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HSU0056

HUASHUO · MOSFETs · TO-252-2L

HSU0056 from HUASHUO, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is limited to ±20 V, with a gate threshold of 1.2 V min to 2.2 V max at ID=250uA.
2 D passive Drain (exposed tab); drain-source voltage is rated at 100 V, with 40 A continuous drain current at TC=25℃ and 90 A pulsed.
3 S passive Source; continuous source (body diode) current is limited to 40 A, with a diode forward voltage of 1.2 V max at IS=1A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 40 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 25 A TC=100℃ 1
Continuous Drain Current ID@TA=25℃ 7.6 A TA=25℃ 1
Continuous Drain Current ID@TA=100℃ 6 A TA=100℃ 1
Pulsed Drain Current IDM 90 A 1
Single Pulse Avalanche Energy EAS 45 mJ 1
Avalanche Current IAS 30 A 1
Total Power Dissipation PD@TC=25℃ 52 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 60 ℃/W Note 1: surface mounted on 1 inch FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 15.5 20 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 21 30 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 40 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU0056
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hsu0056-etched.step / hsu0056-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu0056.step / hsu0056.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 badb03d95b609a85, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF