component
HSU0056
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU0056
HUASHUO · MOSFETs · TO-252-2L
HSU0056 from HUASHUO, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is limited to ±20 V, with a gate threshold of 1.2 V min to 2.2 V max at ID=250uA. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage is rated at 100 V, with 40 A continuous drain current at TC=25℃ and 90 A pulsed. |
| 3 | S | passive | Source; continuous source (body diode) current is limited to 40 A, with a diode forward voltage of 1.2 V max at IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 40 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 25 | A | TC=100℃ | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 7.6 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=100℃ | 6 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | 1 | |||
| Avalanche Current | IAS | 30 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 52 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 60 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 15.5 | 20 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 30 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 40 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU0056 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hsu0056-etched.step/hsu0056-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu0056.step/hsu0056.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
badb03d95b609a85, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).