component
HSTPSC10H12G2YTR
Public Made by Adomby adom
HXY MOSFET SiC Diodes, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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HSTPSC10H12G2YTR
HXY MOSFET · SiC Diodes · TO-263
HSTPSC10H12G2YTR from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SiC Schottky diode (1200V VRRM, 10A class), connected internally to CASE (the tab) per the schematic. |
| 2 | A | passive | Anode of the SiC Schottky diode; the schematic shows the diode between PIN 2 and PIN 1/CASE. |
| 3 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-263 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Peak Reverse Voltage | VR | 1200 | V | 2 | |||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 2 | |||
| Surge Peak Reverse Voltage | VRSM | 1200 | V | 2 | |||
| Operating junction range | Tj | -55 | 175 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Continuous Forward Current | IF | 30 | A | TC = 25°C | 2 | ||
| Continuous Forward Current | IF | 15 | A | TC = 135°C | 2 | ||
| Continuous Forward Current | IF | 10 | A | TC = 160°C | 2 | ||
| Power dissipation | Ptot | 115 | W | TC = 25°C | 2 | ||
| Power dissipation | Ptot | 50 | W | TC = 110°C | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 57 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 41.5 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 90 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 69.5 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| i²dt value | ∫i²dt | 40.5 | A²s | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| i²dt value | ∫i²dt | 24 | A²s | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Forward Voltage | VF | 1.4 | 2 | V | IF=10A, Tj=25°C | 3 | |
| Forward Voltage | VF | 1.7 | V | IF=10A, Tj=175°C | 3 | ||
| Reverse Current | IR | 100 | μA | VR=1200V, Tj=25°C | 3 | ||
| Reverse Current | IR | 200 | μA | VR=1200V, Tj=175°C | 3 | ||
| Total Capacitance | C | 695 | pF | Tj=25°C, f=1MHz, VR=0V | 3 | ||
| Total Capacitance | C | 46 | pF | Tj=25°C, f=1MHz, VR=400V | 3 | ||
| TotalAcapacitance | C | 35 | pF | Tj=25°C, f=1MHz, VR=800V | 3 | ||
| Total Capacitive Charge | QC | 48 | nC | VR=800V | 3 | ||
| Thermal resistance, junction, case | RthJC | 1.3 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
HSTPSC10H12G2YTR - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
hstpsc10h12g2ytr-etched.step/hstpsc10h12g2ytr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hstpsc10h12g2ytr.step/hstpsc10h12g2ytr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
3ccf2732030e6f3c, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).