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HSTPSC10H12G2YTR

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HXY MOSFET SiC Diodes, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshstpsc10h12g2ytrfactory-2.0.0extractor-text

Verified HSTPSC10H12G2YTR

by Ray · last 4 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HSTPSC10H12G2YTR · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-_5pzfx88/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hstpsc10h12g2ytr.kicad_sym✓ hstpsc10h12g2ytr.kicad_mod✓ hstpsc10h12g2ytr.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HSTPSC10H12G2YTR

HXY MOSFET · SiC Diodes · TO-263

HSTPSC10H12G2YTR from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiC Schottky diode (1200V VRRM, 10A class), connected internally to CASE (the tab) per the schematic.
2 A passive Anode of the SiC Schottky diode; the schematic shows the diode between PIN 2 and PIN 1/CASE.
3 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-263
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Peak Reverse Voltage VR 1200 V 2
Repetitive Peak Reverse Voltage VRRM 1200 V 2
Surge Peak Reverse Voltage VRSM 1200 V 2
Operating junction range Tj -55 175 °C 2
Storage temperature range Tstg -55 150 °C 2
Continuous Forward Current IF 30 A TC = 25°C 2
Continuous Forward Current IF 15 A TC = 135°C 2
Continuous Forward Current IF 10 A TC = 160°C 2
Power dissipation Ptot 115 W TC = 25°C 2
Power dissipation Ptot 50 W TC = 110°C 2
Repetitive Peak Forward Surge Current IFRM 57 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 41.5 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 90 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 69.5 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 40.5 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 24 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Forward Voltage VF 1.4 2 V IF=10A, Tj=25°C 3
Forward Voltage VF 1.7 V IF=10A, Tj=175°C 3
Reverse Current IR 100 μA VR=1200V, Tj=25°C 3
Reverse Current IR 200 μA VR=1200V, Tj=175°C 3
Total Capacitance C 695 pF Tj=25°C, f=1MHz, VR=0V 3
Total Capacitance C 46 pF Tj=25°C, f=1MHz, VR=400V 3
TotalAcapacitance C 35 pF Tj=25°C, f=1MHz, VR=800V 3
Total Capacitive Charge QC 48 nC VR=800V 3
Thermal resistance, junction, case RthJC 1.3 °C/W 2

CAD (KiCad official)

  • Symbol: HSTPSC10H12G2YTR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: hstpsc10h12g2ytr-etched.step / hstpsc10h12g2ytr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hstpsc10h12g2ytr.step / hstpsc10h12g2ytr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 3ccf2732030e6f3c, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF