component
HSPHV24-01KTG-C
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HSPHV24-01KTG-C
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HSPHV24-01KTG-C from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection line, rated for a 24 V reverse working voltage and 300 W peak pulse power (8/20 µs) across the device. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection line, rated for a 24 V reverse working voltage and 300 W peak pulse power (8/20 µs) across the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 300 | W | tp = 8/20 μs | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10 s | 1 | ||
| ESD immunity, IEC 61000-4-2 contact discharge | 15 | kV | IEC 61000-4-2, contact discharge (printed ±15 kV) | 1 | |||
| ESD immunity, IEC 61000-4-2 air discharge | 20 | kV | IEC 61000-4-2, air discharge (printed ±20 kV) | 1 | |||
| EFT immunity, IEC 61000-4-4 | 40 | A | IEC 61000-4-4, 5/50 ns | 1 | |||
| Reverse Working Voltage | VRWM | 24 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 26.5 | V | IT = 1 mA | 2 | ||
| Reverse Leakage Current | IR | 0.1 | μA | VRWM = 24 V | 2 | ||
| Clamping Voltage | VC | 40 | 60 | V | IPP = 4 A, tp = 8/20 μs | 2 | |
| Junction Capacitance | CJ | 10 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
HSPHV24-01KTG-C - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hsphv24-01ktg-c-etched.step/hsphv24-01ktg-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsphv24-01ktg-c.step/hsphv24-01ktg-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
9fde12af13d36cfe, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSPHV24-01KTG-C
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HSPHV24-01KTG-C from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection line, rated for a 24 V reverse working voltage and 300 W peak pulse power (8/20 µs) across the device. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection line, rated for a 24 V reverse working voltage and 300 W peak pulse power (8/20 µs) across the device. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | | | 300 | W | tp = 8/20 μs | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | 10 s | 1 |
| ESD immunity, IEC 61000-4-2 contact discharge | | | | 15 | kV | IEC 61000-4-2, contact discharge (printed ±15 kV) | 1 |
| ESD immunity, IEC 61000-4-2 air discharge | | | | 20 | kV | IEC 61000-4-2, air discharge (printed ±20 kV) | 1 |
| EFT immunity, IEC 61000-4-4 | | | | 40 | A | IEC 61000-4-4, 5/50 ns | 1 |
| Reverse Working Voltage | VRWM | | | 24 | V | | 2 |
| Reverse Breakdown Voltage | VBR | 26.5 | | | V | IT = 1 mA | 2 |
| Reverse Leakage Current | IR | | | 0.1 | μA | VRWM = 24 V | 2 |
| Clamping Voltage | VC | | 40 | 60 | V | IPP = 4 A, tp = 8/20 μs | 2 |
| Junction Capacitance | CJ | | 10 | | pF | VR = 0 V, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `HSPHV24-01KTG-C`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hsphv24-01ktg-c-etched.step` / `hsphv24-01ktg-c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsphv24-01ktg-c.step` / `hsphv24-01ktg-c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hsphv24-01ktg-c-datasheet.pdf) (4 pp, sha256 `9fde12af13d36cfe`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsphv24-01ktg-c-datasheet.pdf)