component
HSP8119
Public Made by Adomby adom
HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSP8119
HUASHUO · MOSFETs · TO-220
HSP8119 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (also connected to the mounting tab); drain-source voltage rating is -80 V and continuous drain current is -90 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -90 A and pulsed source current is -270 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -80 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 13.5 | 15 | mΩ | VGS=-10V , ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14.5 | 17 | mΩ | VGS=-4.5V , ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-80V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=-80V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -90 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -270 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -80 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -90 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -60 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -270 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 710 | mJ | VDD=-50V,VGS=-10V,L=0.1mH,Rg=25,IAS=-63A | 1 | ||
| Avalanche Current | IAS | 63 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 210 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.73 | ℃/W | 1 | |||
| Gate Resistance | Rg | 1.7 | Ω | VGS=0V, VDS=0V, f=1.0MHz | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS=-10V , ID=-3A | 2 | ||
| Total Gate Charge | Qg | 190 | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 | ||
| Gate-Source Charge | Qgs | 29 | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 | ||
| Gate-Drain Charge | Qgd | 55 | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 | ||
| Turn-On Delay Time | Td(on) | 25 | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 | ||
| Rise Time | Tr | 20 | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 | ||
| Turn-Off Delay Time | Td(off) | 180 | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 | ||
| Fall Time | Tf | 88 | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 | ||
| Input Capacitance | Ciss | 13300 | pF | VDS=-40V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 390 | pF | VDS=-40V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS=-40V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | Trr | 35 | ns | IF=-20A, di/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 45 | nC | IF=-20A, di/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
HSP8119 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
hsp8119-etched.step/hsp8119-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsp8119.step/hsp8119.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
1c592a92609e9c61, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSP8119
**HUASHUO** · MOSFETs · TO-220
HSP8119 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (also connected to the mounting tab); drain-source voltage rating is -80 V and continuous drain current is -90 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -90 A and pulsed source current is -270 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -80 | | | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 13.5 | 15 | mΩ | VGS=-10V , ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 14.5 | 17 | mΩ | VGS=-4.5V , ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-80V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | uA | VDS=-80V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS | | | -90 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | -270 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -80 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -90 | A | -VGS @ -10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -60 | A | -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | | | -270 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 710 | mJ | VDD=-50V,VGS=-10V,L=0.1mH,Rg=25,IAS=-63A | 1 |
| Avalanche Current | IAS | | | 63 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 210 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 0.73 | ℃/W | | 1 |
| Gate Resistance | Rg | | 1.7 | | Ω | VGS=0V, VDS=0V, f=1.0MHz | 2 |
| Forward Transconductance | gfs | | 30 | | S | VDS=-10V , ID=-3A | 2 |
| Total Gate Charge | Qg | | 190 | | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 |
| Gate-Source Charge | Qgs | | 29 | | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 |
| Gate-Drain Charge | Qgd | | 55 | | nC | VDS=-40V , VGS=-10V , ID=-10A | 2 |
| Turn-On Delay Time | Td(on) | | 25 | | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 |
| Rise Time | Tr | | 20 | | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 |
| Turn-Off Delay Time | Td(off) | | 180 | | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 |
| Fall Time | Tf | | 88 | | ns | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 2 |
| Input Capacitance | Ciss | | 13300 | | pF | VDS=-40V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 390 | | pF | VDS=-40V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 50 | | pF | VDS=-40V , VGS=0V , f=1MHz | 2 |
| Reverse Recovery Time | Trr | | 35 | | ns | IF=-20A, di/dt=100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 45 | | nC | IF=-20A, di/dt=100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `HSP8119`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `hsp8119-etched.step` / `hsp8119-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsp8119.step` / `hsp8119.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](docs/hsp8119-datasheet.pdf) (6 pp, sha256 `1c592a92609e9c61`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsp8119-datasheet.pdf)