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HSP8119

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSP8119

HUASHUO · MOSFETs · TO-220

HSP8119 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA.
2 D passive Drain (also connected to the mounting tab); drain-source voltage rating is -80 V and continuous drain current is -90 A at TC=25℃.
3 S passive Source; continuous source (body diode) current is -90 A and pulsed source current is -270 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -80 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 13.5 15 mΩ VGS=-10V , ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 14.5 17 mΩ VGS=-4.5V , ID=-10A 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=-80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -90 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM -270 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Drain-Source Voltage VDS -80 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -90 A -VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -60 A -VGS @ -10V 1
Pulsed Drain Current IDM -270 A 1
Single Pulse Avalanche Energy EAS 710 mJ VDD=-50V,VGS=-10V,L=0.1mH,Rg=25,IAS=-63A 1
Avalanche Current IAS 63 A 1
Total Power Dissipation PD@TC=25℃ 210 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.73 ℃/W 1
Gate Resistance Rg 1.7 Ω VGS=0V, VDS=0V, f=1.0MHz 2
Forward Transconductance gfs 30 S VDS=-10V , ID=-3A 2
Total Gate Charge Qg 190 nC VDS=-40V , VGS=-10V , ID=-10A 2
Gate-Source Charge Qgs 29 nC VDS=-40V , VGS=-10V , ID=-10A 2
Gate-Drain Charge Qgd 55 nC VDS=-40V , VGS=-10V , ID=-10A 2
Turn-On Delay Time Td(on) 25 ns VDD=-40V , VGS=-10V , RG=6, ID=-10A 2
Rise Time Tr 20 ns VDD=-40V , VGS=-10V , RG=6, ID=-10A 2
Turn-Off Delay Time Td(off) 180 ns VDD=-40V , VGS=-10V , RG=6, ID=-10A 2
Fall Time Tf 88 ns VDD=-40V , VGS=-10V , RG=6, ID=-10A 2
Input Capacitance Ciss 13300 pF VDS=-40V , VGS=0V , f=1MHz 2
Output Capacitance Coss 390 pF VDS=-40V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS=-40V , VGS=0V , f=1MHz 2
Reverse Recovery Time Trr 35 ns IF=-20A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 45 nC IF=-20A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: HSP8119
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp8119-etched.step / hsp8119-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp8119.step / hsp8119.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 1c592a92609e9c61, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF