# HSP5N25

**HUASHUO** · MOSFETs · TO-220

HSP5N25 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, with a maximum gate-source voltage of ±20 V and a gate threshold voltage of 1 V min to 3 V max at VGS=VDS, ID=250uA. |
| 2 | D | passive | Drain terminal, rated for 250 V drain-source voltage and 5 A continuous drain current at TC=25℃ (16 A pulsed); it is also connected to the TO-220 tab. |
| 3 | S | passive | Source terminal, with a continuous body-diode source current of 5 A max and a pulsed source current of 16 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 250 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 5 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 3 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 16 | mJ |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 38 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 70 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 4 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 250 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 970 | 1200 | m | VGS=10V , ID=1A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VGS=VDS , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=250V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 100 | uA | VDS=250V , VGS=0V , TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 5 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 16 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSP5N25`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `hsp5n25-etched.step` / `hsp5n25-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsp5n25.step` / `hsp5n25.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](docs/hsp5n25-datasheet.pdf) (6 pp, sha256 `de1caa219e0100d2`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsp5n25-datasheet.pdf)