main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1d ago
viewers hsp5n25: viewers · Ray 1d ago
hsp5n25-etched.glb Publish 0.1.0 · Ray 1d ago
hsp5n25-etched.step hsp5n25: factory component page (tier=lcsc) · Ray 1d ago
hsp5n25-hero.glb hsp5n25: hero GLB from the etched model (keeps the MPN mark) · Ray 1d ago
hsp5n25-hero.overlay.json Publish 0.1.0 · Ray 1d ago
hsp5n25.glb Publish 0.1.0 · Ray 1d ago
hsp5n25.kicad_mod Publish 0.1.0 · Ray 1d ago
hsp5n25.kicad_sym Publish 0.1.0 · Ray 1d ago
hsp5n25.lbr Publish 0.1.0 · Ray 1d ago
hsp5n25.step Publish 0.1.0 · Ray 1d ago
package.json Publish 0.1.0 · Ray 1d ago
page.json Set visibility: public · Ray 1d ago
README.md Publish 0.1.0 · Ray 1d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 1d ago

HSP5N25

HUASHUO · MOSFETs · TO-220

HSP5N25 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with a maximum gate-source voltage of ±20 V and a gate threshold voltage of 1 V min to 3 V max at VGS=VDS, ID=250uA.
2 D passive Drain terminal, rated for 250 V drain-source voltage and 5 A continuous drain current at TC=25℃ (16 A pulsed); it is also connected to the TO-220 tab.
3 S passive Source terminal, with a continuous body-diode source current of 5 A max and a pulsed source current of 16 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 250 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 5 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 3 A VGS @ 10V 1
Pulsed Drain Current IDM 16 A 1
Single Pulse Avalanche Energy EAS 16 mJ 1
Total Power Dissipation PD@TC=25℃ 38 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 70 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 4 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 250 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 970 1200 m VGS=10V , ID=1A 2
Gate Threshold Voltage VGS(th) 1 1.8 3 V VGS=VDS , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=250V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=250V , VGS=0V , TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 5 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 16 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSP5N25
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp5n25-etched.step / hsp5n25-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp5n25.step / hsp5n25.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 de1caa219e0100d2, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF