component
HSP044N25
Public Made by Adomby adom
HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| hsp044n25-etched.glb | 14d ago |
| hsp044n25-etched.step | 14d ago |
| hsp044n25-hero.glb | 14d ago |
| hsp044n25-hero.overlay.json | 14d ago |
| hsp044n25.glb | 14d ago |
| hsp044n25.kicad_mod | 14d ago |
| hsp044n25.kicad_sym | 14d ago |
| hsp044n25.lbr | 14d ago |
| hsp044n25.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
HSP044N25
HUASHUO · MOSFETs · TO-220
HSP044N25 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold of 3 V min to 5 V max at ID=250uA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage rated 250 V, with continuous drain current of 50 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is 50 A max, with diode forward voltage of 1.2 V max at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VGS=VDS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 44 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=150V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=150V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 50 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 250 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 50 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 34 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 195 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 165 | mJ | VDD=40V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 325 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.48 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSP044N25 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
hsp044n25-etched.step/hsp044n25-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsp044n25.step/hsp044n25.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
ac7d13680de79e50, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).