# HSM6303

**HUASHUO** · MOSFETs · SOP-8

HSM6303 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel); drain-source voltage rated -60 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel); drain-source voltage rated -60 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous drain current -4 A at TA=25℃ and pulsed -7.5 A. |
| 6 | D2 | passive | Drain of MOSFET 2, tied with pin 5; continuous drain current -4 A at TA=25℃. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous drain current -4 A at TA=25℃ and pulsed -7.5 A. |
| 8 | D1 | passive | Drain of MOSFET 1, tied with pin 7; continuous drain current -4 A at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 58 | 70 | mΩ | VGS=-10V , ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 105 | mΩ | VGS=-4.5V , ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -3.7 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -7.5 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ | -4 |  |  | A | VGS @ -10V | 1 |
| Continuous Drain Current | ID@TA=70℃ | -3 |  |  | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -7.5 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 35.4 | mJ |  | 1 |
| Avalanche Current | IAS | -26.6 |  |  | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 1.5 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 36 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `HSM6303`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm6303-etched.step` / `hsm6303-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm6303.step` / `hsm6303.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799935444574208) (6 pp, sha256 `a2678009b9a578b7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsm6303-datasheet.pdf)