component
HSM6303
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM6303
HUASHUO · MOSFETs · SOP-8
HSM6303 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel); drain-source voltage rated -60 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel); drain-source voltage rated -60 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous drain current -4 A at TA=25℃ and pulsed -7.5 A. |
| 6 | D2 | passive | Drain of MOSFET 2, tied with pin 5; continuous drain current -4 A at TA=25℃. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous drain current -4 A at TA=25℃ and pulsed -7.5 A. |
| 8 | D1 | passive | Drain of MOSFET 1, tied with pin 7; continuous drain current -4 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 58 | 70 | mΩ | VGS=-10V , ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 75 | 105 | mΩ | VGS=-4.5V , ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -3.7 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -7.5 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -4 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -3 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -7.5 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 35.4 | mJ | 1 | |||
| Avalanche Current | IAS | -26.6 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 36 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSM6303 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm6303-etched.step/hsm6303-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm6303.step/hsm6303.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
a2678009b9a578b7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).