# HSM6113

**HUASHUO** · MOSFETs · SOP-8

HSM6113 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; body diode continuous source current is limited to -4.1 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; body diode continuous source current is limited to -4.1 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; body diode continuous source current is limited to -4.1 A. |
| 4 | G | input | Gate of the P-channel MOSFET with a gate-source voltage rating of ±20 V and a threshold of -1.2 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6-8; drain-source voltage rating is -60 V and continuous drain current is -4.1 A at TA=25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage rating is -60 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage rating is -60 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5-7; drain-source voltage rating is -60 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ | -4.1 |  |  | A | VGS @ -10V, TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=70℃ | -3.2 |  |  | A | VGS @ -10V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM | -8.2 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 29.7 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24.4A | 1 |
| Avalanche Current | IAS |  |  | 24.4 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 3.1 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 36 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 90 | mΩ | VGS=-10V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 115 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | -0.03 |  | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | 4.56 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 8.7 |  | S | VDS=-5V, ID=-3A | 2 |
| Gate Resistance | Rg |  | 15 |  |  | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (-4.5V) | Qg |  | 11.8 |  | nC | VDS=-48V, VGS=-4.5V, ID=-3A | 2 |
| Gate-Source Charge | Qgs |  | 1.9 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 6.5 |  | nC |  | 2 |
| Turn-On Delay Time | Td(on) |  | 8.8 |  | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 |
| Rise Time | Tr |  | 19.6 |  | ns |  | 2 |
| Turn-Off Delay Time | Td(off) |  | 47.2 |  | ns |  | 2 |
| Fall Time | Tf |  | 9.6 |  | ns |  | 2 |
| Input Capacitance | Ciss |  | 1080 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 73 |  | pF |  | 2 |
| Reverse Transfer Capacitance | Crss |  | 50 |  | pF |  | 2 |
| Continuous Source Current | IS |  |  | -4.1 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -8.2 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSM6113`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm6113-etched.step` / `hsm6113-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm6113.step` / `hsm6113.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799821854298112) (6 pp, sha256 `851862bd5599e6c9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsm6113-datasheet.pdf)