component
HSM6113
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| hsm6113-etched.glb | 7d ago |
| hsm6113-etched.step | 7d ago |
| hsm6113-hero.glb | 7d ago |
| hsm6113-hero.overlay.json | 7d ago |
| hsm6113.glb | 7d ago |
| hsm6113.kicad_mod | 7d ago |
| hsm6113.kicad_sym | 7d ago |
| hsm6113.lbr | 7d ago |
| hsm6113.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
HSM6113
HUASHUO · MOSFETs · SOP-8
HSM6113 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; body diode continuous source current is limited to -4.1 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; body diode continuous source current is limited to -4.1 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; body diode continuous source current is limited to -4.1 A. |
| 4 | G | input | Gate of the P-channel MOSFET with a gate-source voltage rating of ±20 V and a threshold of -1.2 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6-8; drain-source voltage rating is -60 V and continuous drain current is -4.1 A at TA=25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage rating is -60 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage rating is -60 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5-7; drain-source voltage rating is -60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -4.1 | A | VGS @ -10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -3.2 | A | VGS @ -10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -8.2 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 29.7 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24.4A | 1 | ||
| Avalanche Current | IAS | 24.4 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 36 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 90 | mΩ | VGS=-10V, ID=-3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 115 | mΩ | VGS=-4.5V, ID=-2A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.03 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.56 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 8.7 | S | VDS=-5V, ID=-3A | 2 | ||
| Gate Resistance | Rg | 15 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge (-4.5V) | Qg | 11.8 | nC | VDS=-48V, VGS=-4.5V, ID=-3A | 2 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 6.5 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 8.8 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Rise Time | Tr | 19.6 | ns | 2 | |||
| Turn-Off Delay Time | Td(off) | 47.2 | ns | 2 | |||
| Fall Time | Tf | 9.6 | ns | 2 | |||
| Input Capacitance | Ciss | 1080 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 73 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 50 | pF | 2 | |||
| Continuous Source Current | IS | -4.1 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -8.2 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSM6113 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm6113-etched.step/hsm6113-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm6113.step/hsm6113.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
851862bd5599e6c9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).