component
HSM4963
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSM4963
HUASHUO · MOSFETs · SOP-8
HSM4963 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -20 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±12 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -20 V. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±12 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current -6 A at TA=25℃, pulsed -24 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -6 A at TA=25℃. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current -6 A at TA=25℃, pulsed -24 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -6 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 55 | mΩ | VGS=-4.5V , ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | 65 | mΩ | VGS=-2.5V , ID=-5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.85 | -1.2 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-20V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -6 | A | TA=25℃, -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=70℃, -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -24 | A | 1 | |||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 110 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | 1 | |||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.6 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 5 | S | VDS=-5V , ID=-4A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 8 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 | ||
| Gate-Source Charge | Qgs | 2 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 | ||
| Turn-On Delay Time | Td(on) | 12 | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 | ||
| Rise Time | Tr | 36 | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 | ||
| Turn-Off Delay Time | Td(off) | 30 | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 | ||
| Fall Time | Tf | 10 | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 | ||
| Input Capacitance | Ciss | 740 | pF | VDS=-10V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 275 | pF | VDS=-10V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 195 | pF | VDS=-10V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSM4963 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm4963-etched.step/hsm4963-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm4963.step/hsm4963.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
102ce8f7fd3ee29b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSM4963
**HUASHUO** · MOSFETs · SOP-8
HSM4963 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -20 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±12 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -20 V. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±12 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current -6 A at TA=25℃, pulsed -24 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -6 A at TA=25℃. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current -6 A at TA=25℃, pulsed -24 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -6 A at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 40 | 55 | mΩ | VGS=-4.5V , ID=-6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 50 | 65 | mΩ | VGS=-2.5V , ID=-5A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.85 | -1.2 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-20V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-20V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V , VDS=0V | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -6 | A | TA=25℃, -VGS @ -10V | 1 |
| Continuous Drain Current | ID | | | -5 | A | TA=70℃, -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | | | -24 | A | | 1 |
| Total Power Dissipation | PD | | | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 110 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 50 | ℃/W | | 1 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 4.6 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 5 | | S | VDS=-5V , ID=-4A | 2 |
| Total Gate Charge (-4.5V) | Qg | | 8 | | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 |
| Gate-Source Charge | Qgs | | 2 | | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDS=-10V , VGS=-4.5V , ID=-4A | 2 |
| Turn-On Delay Time | Td(on) | | 12 | | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 |
| Rise Time | Tr | | 36 | | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 |
| Turn-Off Delay Time | Td(off) | | 30 | | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 |
| Fall Time | Tf | | 10 | | ns | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | 2 |
| Input Capacitance | Ciss | | 740 | | pF | VDS=-10V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 275 | | pF | VDS=-10V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 195 | | pF | VDS=-10V , VGS=0V , f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `HSM4963`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm4963-etched.step` / `hsm4963-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm4963.step` / `hsm4963.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](docs/hsm4963-datasheet.pdf) (6 pp, sha256 `102ce8f7fd3ee29b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsm4963-datasheet.pdf)